Semiconductor device and forming method thereof

Abstract

The invention discloses a semiconductor device and a forming method thereof, and the method comprises the steps: providing a substrate which is provided with a first fin part and a second fin part adjacent to each other; forming a first gate structure stretching across the first fin part on the substrate, the first gate structure covering the part of the top surface of the side wall of the first fin part; forming a second gate structure stretching across the second fin part on the substrate, the second gate structure covering the part of the top surface of the side wall of the second fin part;after the first gate structure and the second gate structure are formed, forming a first sacrificial layer on the top and the side wall of the first fin part on the two sides of the first gate structure; forming a first protective layer on the side wall of the first sacrificial layer; removing the first sacrificial layer and the first fin part on the two sides of the first gate structure to forma first groove which exposes the side wall of the first protective layer; forming a first doping layer in the first groove; and forming a second doping layer in the second fin part at two sides of thesecond gate structure. The method improves the performance of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. Transistors, as the most basic semiconductor devices, are being widely used at present. The control ability of traditional planar devices on channel current is weakened, resulting in short channel effect and leakage current, which ultimately affects the electrical performance of semiconductor devices. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art proposes a fin field effect transistor (Fin FET), which is a common multi-gate device, and the structure of the fin field effect transistor includes : the fin and the isolation layer located on the surface of the...

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Problems solved by technology

[0004] However, as the size of semiconductor devices decreases, the distance between transistors decreases, and the source doped layers or drain doped layers of adjacent transistors are easily shorted, resulting in poor performance of the formed semiconductor devices.

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