High-performance gallium nitride microwave rectification Schottky diode and preparation method thereof
A technology of Schottky diodes and gallium nitride, which is applied in the field of microelectronics, can solve the problems of small capacitance, low withstand voltage, and large resistance of THz diodes, and achieve the effects of simple preparation methods, reduced resistance, and reduced junction capacitance
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Embodiment 1
[0050] See figure 1 , figure 1 A schematic structural diagram of a high-performance gallium nitride microwave rectifying Schottky diode provided by an embodiment of the present invention. The Schottky diode includes a Schottky anode 10, wherein the Schottky anode 10 includes: at least two juxtaposed finger structures 11 and at least one Schottky metal connection part 12, between two adjacent finger structures 11 Between them, the ends on the same side are connected by a Schottky metal connection part 12, and at least two juxtaposed finger structures 11 and at least one Schottky metal connection part 12 together form a Schottky junction.
[0051]Specifically, in order to ensure the performance of the diode and facilitate preparation, the width and length of the juxtaposed finger structures 11 are equal, and the width of the Schottky metal connection part 12 is also equal to the width of the finger structure 11; the two finger structures The distances between 11 may be equal o...
Embodiment 2
[0060] On the basis of the first embodiment, this embodiment takes a diode with a U-shaped Schottky anode and a diode with a W-shaped Schottky anode as examples for specific description.
[0061] See figure 2 and image 3 , figure 2 A structure diagram of a diode with a U-shaped Schottky anode provided for an embodiment of the present invention, image 3 for figure 2 Top view of a diode with a U-shaped Schottky anode in .
[0062] The diode with U-shaped Schottky anode includes Schottky anode 10, an air bridge 20, ohmic contact cathode 30, N - GaN layer 40, N + GaN layer 50 . Among them, the number of finger structures 11 in the Schottky anode 10 is two, and the number of Schottky metal connection parts 12 is one; the length and width of the two finger structures 11 are equal; the Schottky metal connection parts 12 The shape of the arc is arc-shaped, and its width is equal to the width of the finger structure 11 . For the positional relationship of other structures,...
Embodiment 3
[0078] On the basis of Embodiment 1 and Embodiment 2, this embodiment provides a preparation method of a high-performance gallium nitride microwave rectifier Schottky diode, which is used to prepare the Schottky diode of Embodiment 1 or Embodiment 2. base diode, in the prepared diode, the Schottky anode 10 presents a T-shaped structure, such as Figure 4 shown.
[0079] See Figure 10 and Figure 11a-Figure 11f , Figure 10 A schematic flow chart of a method for preparing a high-performance gallium nitride microwave rectifier Schottky diode provided by an embodiment of the present invention, Figure 11a-Figure 11f It is a process schematic diagram of a preparation method of a high-performance gallium nitride microwave rectifying Schottky diode provided by an embodiment of the present invention. The preparation method specifically comprises steps:
[0080] S1, etch N - GaN layer and located on the N - N below the GaN layer + part of the GaN layer so that the N + The Ga...
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Abstract
Description
Claims
Application Information
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