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Nano noble metal particle modified nickel ferrite film resistive random access memory device and preparation method thereof

A resistive random access and memory device technology, applied in static memory, digital memory information, electrical components, etc., to achieve broad application potential, easy control, and good stability.

Inactive Publication Date: 2021-02-23
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no research report on the resistive random storage properties of nickel ferrite films modified by nano-noble metal particles

Method used

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  • Nano noble metal particle modified nickel ferrite film resistive random access memory device and preparation method thereof
  • Nano noble metal particle modified nickel ferrite film resistive random access memory device and preparation method thereof
  • Nano noble metal particle modified nickel ferrite film resistive random access memory device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Example 1 Preparation of Pt / 0.5% Ag-NiFe by sol-gel method 2 o 4 / Pt resistive RAM

[0030] 0.5% Ag-NiFe 2 o 4 Preparation of precursor solution: NiFe 2 o 4 The solvent of the precursor solution is a mixed solution of 16 ml ethylene glycol methyl ether and 8 ml glacial acetic acid, and the solute is 1.1944 g Ni(CH 3 COO) 2 • 4H 2 O and 3.8784 g Fe(NO 3 ) 3 •9H 2 O, stirred at room temperature for 8 hours; the nano-noble metal salt solution was obtained by dissolving 0.0041 g of silver nitrate in 1 ml of ethylene glycol methyl ether solution, and the noble metal salt solution was added dropwise to NiFe 2 o 4 In the precursor solution, stir for 10-30 minutes to finally get 0.5% Ag-NiFe 2 o 4 Thin film precursor solution.

[0031] Precursor film preparation: 0.5% Ag-NiFe 2 o 4 The precursor solution is spin-coated on the Pt substrate, the spin-coating parameters are adjusted to 3000 rpm, the spin time is 30 s, the pretreatment temperature of each spin-coati...

Embodiment 2

[0035] Example 2 Preparation of Au / 1% Au-NiFe by sol-gel method 2 o 4 / ITO Resistive Random Access Memory Device

[0036] 1% Au-NiFe 2 o 4 Preparation of precursor solution: the solvent of the precursor solution is a mixed solution of 16 ml ethylene glycol methyl ether and 8 ml glacial acetic acid, and the solute is 1.1944 g Ni(CH 3 COO) 2 • 4H 2 O and 3.8784 g Fe(NO 3 ) 3 •9H 2 O, stirred at room temperature for 8 hours; the nanometer noble metal salt solution was obtained by dissolving 0.0198 g of chloroauric acid in 1 ml of ethylene glycol methyl ether solution, and the noble metal salt solution was added dropwise to NiFe 2 o 4 In the precursor solution, stir for 10-30 minutes to finally get 1% Au-NiFe 2 o 4 Thin film precursor solution.

[0037] Precursor film preparation: 1% Au-NiFe 2 o 4 The precursor solution was spin-coated on the ITO substrate, the spin-coating parameters were adjusted to 3000 rpm, the spin time was 30 s, the pretreatment temperature of ...

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Abstract

The invention discloses a nano noble metal particle modified nickel ferrite thin film resistive random access memory device and a preparation method thereof, and belongs to the technical field of microelectronic novel nonvolatile memories. The resistive random access memory device is composed of a conductive substrate, a nano noble metal particle modified nickel ferrite film and a conductive top electrode. According to the preparation method for constructing the memory device, the nano noble metal particle modified nickel ferrite film is prepared by adopting a simple sol-gel method, the chemical components of the film are easy to control, the stability is good, the molecular level can be reached, and the film is uniform, compact and crack-free. And a conductive top electrode is plated on the surface of the film by adopting a film plating technology. The resistive random access memory device in the present invention exhibits excellent on / off ratio, cycle stability, and retention characteristics. The above excellent characteristics show that the resistive random access memory device has a potential application prospect in the technical field of micro-electronic nonvolatile memories.

Description

technical field [0001] The invention relates to the technical field of new microelectronic non-volatile memory, in particular to a non-volatile memory device and a preparation method thereof based on the resistive random memory characteristic of nickel ferrite thin film. Background technique [0002] Semiconductor memory is a semiconductor device that uses semiconductor circuits as storage media. It plays an important role in the fields of computer electronics, automotive electronics, communication electronics, and consumer electronics. In order to break through the inherent defects and size limits of traditional Flash memory, in recent years, the industry and academia have developed a variety of high-density, high-speed and low-power emerging technologies that are expected to replace Flash memory based on different materials, different mechanisms, and different operating modes. Non-volatile memory, such as ferroelectric memory, magnetoresistive memory, phase change memory a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C13/00
CPCG11C13/0002H10N70/20H10N70/8836H10N70/011
Inventor 郝爱泽
Owner XINJIANG UNIVERSITY
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