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Metal base substrate

A metal base, metal substrate technology, applied in metal pattern materials, circuit substrate materials, metal layered products, etc., can solve the problems of high thermal expansion rate, reduced insulation layer elasticity, low thermal expansion rate, etc., and achieve the effect of suppressing solder cracks

Pending Publication Date: 2021-02-26
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the metal-clad laminate as described in Patent Document 1 generally has a large coefficient of thermal expansion, and an electronic component generally made of ceramics has a low coefficient of thermal expansion.
When the difference in thermal expansion coefficient between the metal-clad laminate and the electronic component increases, the stress applied to the solder that joins the electronic component and the metal base substrate by turning on / off the electronic component or cooling and heating cycles due to the external environment increases. , there is a problem that solder cracks are prone to occur
[0008] On the other hand, the silicone resin described in Patent Document 2 has low elasticity compared with polyimide resin or polyamideimide resin.
However, since the thermally conductive filler is contained in the insulating layer of the metal base substrate, the elasticity of the insulating layer is lowered compared to the silicone resin alone
Therefore, it is difficult to sufficiently reduce the stress applied to the solder that joins the electronic component and the metal base substrate by cooling and heating cycles only by using a silicone resin as the resin for the insulating layer.

Method used

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Examples

Experimental program
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Effect test

Embodiment

[0065] Hereinafter, the effects of the present invention will be described through examples.

[0066] [Example 1 of the present invention]

[0067]4,4'-Diaminodiphenyl ether and NMP (N-methyl-2-pyrrolidine) were placed in a 300 mL separable flask. The amount of NMP was adjusted so that the density|concentration of the obtained polyamic acid might become 40 mass %. After stirring at room temperature to completely dissolve 4,4'-diaminodiphenyl ether, a predetermined amount of tetracarboxylic dianhydride was added little by little so that the internal temperature did not exceed 30°C. Then, stirring was continued for 16 hours under a nitrogen atmosphere to prepare a polyamic acid (polyimide precursor) solution.

[0068] Alumina particles (average particle diameter: 0.5 μm) were prepared as ceramic particles (thermally conductive filler). The prepared 1.0 g of alumina particles and 10 g of NMP were mixed and subjected to ultrasonic treatment for 30 minutes to prepare an alumina ...

example 4

[0087] Except that the film thickness, purity, average crystal grain size and average crystal grain size / (100-purity) are the values ​​shown in Table 2 below instead of aluminum foil, metal The base substrate, and the crack length of the solder layer after applying a thermal cycle was measured. The average crystal grain size and the average crystal grain size / (100-purity) of the copper foil were adjusted by performing heat treatment at a temperature of 300° C. for a heat treatment time shown in Table 2 below. In addition, regarding the purity of the copper foil, except that the impurity elements are Na, Mg, Si, Al, P, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Ge, Nb, Mo, Ru, Pd, Ag, In, Sn, Sb, Ba, Hf, W, Pt, Au, Pb, and Bi were measured in the same manner as the purity of aluminum foil. About the average crystal grain diameter of copper foil, it measured similarly to the average crystal grain diameter of aluminum foil.

[0088] [Table 2]

[0089]

[0090] Regarding the ...

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Abstract

A metal base substrate (2) obtained by layering, in this order, a metal substrate (10), an insulating layer (20), and a circuit layer (40), wherein the insulating layer (20) contains a resin, the circuit layer (40) exhibits a film thickness in the range of 10-1,000 [mu]m, inclusive, and formula (1) is satisfied when the average crystalline particle diameter is expressed in units of [mu]m and the purity is expressed in units of mass%. (1): average crystalline particle diameter / (100-purity)>5.

Description

technical field [0001] The present invention relates to a metal base substrate. [0002] This application claims priority based on Patent Application No. 2018-134789 filed in Japan on July 18, 2018, and the content thereof is hereby cited. Background technique [0003] A metal base substrate is known as one of substrates on which electronic components such as semiconductor elements are mounted. The metal base substrate is a laminate formed by sequentially laminating a metal substrate, an insulating layer, and a circuit layer. Electronic components are mounted on the circuit layer with solder. In the metal base substrate having such a structure, heat generated in the electronic component is transferred to the metal substrate via the insulating layer, and is dissipated from the metal substrate to the outside. [0004] The insulating layer of the metal base substrate is generally formed of an insulating resin composition containing a resin excellent in insulating properties ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/05B32B15/08H01B5/14H01L23/12H01L23/14
CPCH01B5/14H01L23/3735H01L23/3737H01L23/142H05K1/056H05K2201/0209H05K1/09B32B15/08H01L23/12H01L23/14B32B15/20B32B27/281B32B2250/03B32B2264/107B32B2307/206B32B2307/302B32B2457/08
Inventor 石川史朗野中荘平
Owner MITSUBISHI MATERIALS CORP
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