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Preparation method of tellurium-bismuth-based target material

A technology of bismuth tellurium and target material, which is applied in metal material coating process, ion implantation plating, coating, etc., to meet the application requirements, high purity and excellent performance

Active Publication Date: 2021-03-09
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] As for the production of bismuth telluride-based targets, there are currently no relevant reports on the results of research in this area at home and abroad. Therefore, it is necessary to carry out research on the preparation process of bismuth telluride-based targets. In view of the shortcomings of existing technologies, this paper The invention proposes a preparation method of tellurium-bismuth-based target

Method used

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preparation example Construction

[0023] The invention provides a method for preparing a tellurium-bismuth-based target, the preparation method comprising the following steps:

[0024] Grinding and cleaning, take P-type Te 3 Bi x Sb 2-x +ywt.%Te crystal rod, polish the oxide layer on its surface, clean it with absolute ethanol, and finally blow it dry.

[0025] In the above P-type Te 3 Bi x Sb 2-x In the ingot with +ywt.%Te, the value of x is between 0.2 and 0.6, and the value of y is between 2 and 4. The equipment used for grinding is a pneumatic grinder. It can be judged to be polished clean.

[0026] Weigh the ingredients, weigh a certain mass of crystal rod after drying, and place it in the melting crucible after being crushed by a crusher.

[0027] In some embodiments of the present invention, the melting crucible is one of graphite crucible, alumina crucible and zirconia crucible.

[0028] For vacuum melting, the crucible is evacuated to (3.5±1)×10 -2 After Pa, fill the furnace with protective g...

Embodiment 1

[0038] (1) Grinding and cleaning, take P-type Te 3 Bi 0.4 Sb 1.6 +3wt.%Te crystal rod, polish the oxide layer on its surface, clean it with absolute ethanol, and finally dry it;

[0039] (2) Weigh the ingredients, weigh 6.85kg dried crystal rods, crush them with a crusher and place them in an alumina crucible;

[0040] (3) Vacuum melting, the alumina crucible is evacuated to 2.5×10 -2 After Pa, fill the furnace with argon and nitrogen to wash the furnace, and after vacuuming again, refill the new argon and nitrogen to make the filling pressure in the melting crucible 0.08MPa, power on and heat to 650°C for 10 minutes of melting, adjust The heating power increases the temperature to 750°C for 4 minutes of refining to obtain a tellurium-bismuth-based melt;

[0041] (4) Casting molding, applying vibration with a vibration frequency of 40 Hz and controlling the casting flow rate to 250 g / s, so that the tellurium-bismuth-based melt is cast in 28 seconds, and the tellurium-bismu...

Embodiment 2

[0045] (1) Grinding and cleaning, take P-type Te 3 Bi 0.5 Sb 1.5 +2wt.%Te crystal rod, polish the oxide layer on its surface, clean it with absolute ethanol, and finally dry it;

[0046] (2) Weigh the ingredients, weigh 5.87kg dried crystal rods, crush them with a crusher, and place them in a graphite crucible;

[0047] (3) Vacuum melting, the graphite crucible is evacuated to 3×10 -2 After Pa, fill the furnace with argon and nitrogen to wash the furnace, and after vacuuming again, refill with new argon and nitrogen to make the filling pressure in the melting crucible 0.08MPa, power on and heat to 700°C for 8 minutes of melting, adjust The heating power raises the temperature to 760°C for 5 minutes of refining to obtain a tellurium-bismuth-based melt;

[0048] (4) Casting molding, applying vibration with a vibration frequency of 30 Hz and controlling the casting flow rate to 200 g / s, so that the tellurium-bismuth-based melt is cast in 29 seconds, and the tellurium-bismuth-...

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Abstract

The invention discloses a preparation method of a tellurium-bismuth-based target material, wherein the comprises the following steps: taking a P-type Te3BixSb[2-x]+y wt.%Te crystal bar, polishing theoxide layer on the surface of the crystal bar, washing with absolute ethyl alcohol cleanly, and finally blow-drying; weighing a certain mass of blow-dried crystal bars, crushing the crystal bars by acrusher, and putting the crushed crystal bars into a smelting crucible; vacuumizing the crucible to (3.5+ / -1)*10<-2> Pa, introducing protective gas to wash a furnace, vacuumizing again, introducing new protective gas, electrifying and heating to 650-750 DEG C to smelt for the first time, and regulating the heating power to increase the temperature to 750-800 DEG C to refine for the second time toobtain tellurium-bismuth-based melt; casting the tellurium-bismuth-based melt to obtain a tellurium-bismuth-based target blank; and machining the tellurium-bismuth-based target blank to obtain the tellurium-bismuth-based target material. According to the preparation method of the tellurium-bismuth-based target material, the prepared tellurium-bismuth-based target material is high in purity, the relative density is larger than 95%, a thin-film thermoelectric material prepared from the target material can be bent, the performance is excellent, and various application requirements can be met.

Description

technical field [0001] The invention relates to the technical field of preparing high-performance target materials, in particular to a preparation method of tellurium-bismuth-based target materials. Background technique [0002] Thermoelectric materials are functional materials that use carrier movement energy to convert thermal energy and electrical energy into each other. The application of thermoelectric materials does not require the use of transmission parts, and there is no noise and no waste during operation. It is the same as the application of secondary energy sources such as solar energy, wind energy, and water energy. It has no pollution to the environment, and this material has reliable performance and long service life. , is an environmentally friendly material with broad application prospects. Bismuth telluride-based thermoelectric materials are still the materials with the best thermoelectric performance at room temperature, and have been commercialized. Gene...

Claims

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Application Information

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IPC IPC(8): C04B35/515C04B35/653C04B35/628C23C14/34
CPCC04B35/547C04B35/653C04B35/62605C23C14/3414C04B2235/77C04B2235/96
Inventor 蔡新志朱刘童培云冉成义苏紫珊
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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