A kind of preparation method of semiconductor device

Abstract

The invention relates to a method for preparing a semiconductor device, comprising the following steps: depositing a first hard mask layer on a substrate; etching the first hard mask layer to leave a central region, and then implanting ions into the source and drain electrodes; Depositing a second hard mask layer on the outer edge of the first hard mask layer; etching a hole structure on the central area of ​​the first hard mask layer, and etching the substrate passivation layer at the corresponding position of the hole structure; Carry out metal deposition on the first hard mask layer and the second hard mask layer; etch the hard mask layer after etching the first hard mask layer and part of the metal on the second hard mask layer to form a gate cap structure; The cap structure exposes the metal regions of the source and drain electrodes; metal is deposited on the metal region to remove the shielding of the gate cap structure. The method of this scheme realizes gate preparation through deposition and etching, and does not need a photolithography machine when preparing the gate. The process fluctuation is small, and it has the characteristics of low cost, high efficiency, and high yield, and can be widely used in high-frequency mm It involves the production and manufacture of terahertz chips.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to a method for preparing a semiconductor device. Background technique [0002] With the continuous development of the electronic information industry, the preparation technology of integrated circuits has attracted more and more attention. High-frequency semiconductor radio frequency devices have very strict requirements on the size of the device, especially the gate length, which requires a nanoscale photolithography machine for fabrication. However, the lithography scale of the lithography machine is limited by various technologies such as light sources, and it is difficult to achieve nanoscale grid lithography; and the use of a lithography machine to achieve grid lithography requires extremely high process costs and serious environmental problems Sensitivity, prone to process fluctuations, resulting in a decline in yield. Contents of the inventio...

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Problems solved by technology

[0003] In order to solve the problem that nanoscale photolithography is required in the preparation of the gate of the existing high-frequency millimeter-wave and terahertz chips, the present invention provides a method for preparing a semiconductor device, which realizes the preparation of the gate by deposition and etching, and prepares the gate There is no need for a photolithography machine in extreme cases, the process fluctuation is small, it has the characteristics of low cost, high efficiency, and high yield, and can be widely used in the production and manufacture of high-frequency millimeter wave and terahertz chips

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