Zinc oxide electric bridge ultraviolet detection unit and preparation method thereof

A detection unit, zinc oxide technology, applied in the field of microelectronics, can solve the problems of large volume and high price, and achieve the effect of cost saving and easy combination

Active Publication Date: 2021-03-16
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a zinc oxide bridge ultraviolet detection unit and its preparation method, which solves the defects of large volume and high price due to the need for optical filters in the existing ultraviolet detectors

Method used

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  • Zinc oxide electric bridge ultraviolet detection unit and preparation method thereof
  • Zinc oxide electric bridge ultraviolet detection unit and preparation method thereof
  • Zinc oxide electric bridge ultraviolet detection unit and preparation method thereof

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preparation example Construction

[0042] A preparation method of a zinc oxide bridge ultraviolet detection unit, comprising the following steps:

[0043] In the first step, the substrate is washed in acetone, absolute ethanol and ultrapure water in sequence to obtain a clean substrate, wherein the substrate is a quartz sheet or a silicon sheet with an oxide layer;

[0044] In the second step, on a clean substrate according to figure 1 The shown bridge structure is photolithographically obtained to obtain electrode patterns;

[0045] The third step is to perform electron beam evaporation on the electrode pattern to form a metal electrode layer;

[0046] The fourth step is to prepare a ZnO film by radio frequency magnetron sputtering on the metal electrode layer to obtain a zinc oxide semiconductor layer;

[0047] The fifth step is to sequentially perform photolithography and wet etching on the zinc oxide semiconductor layer to obtain a patterned zinc oxide layer;

[0048] The sixth step is to prepare SiO by RF...

Embodiment

[0056] In this embodiment, the zinc oxide bridge ultraviolet detection unit is less than 1mm 3 , UV photoresistors are MSM devices.

[0057] When using the ultraviolet detector involved in this embodiment to detect ultraviolet rays, such as Figure 4 As shown, as the intensity of ultraviolet light increases, the bridge outputs a larger voltage, therefore, the ultraviolet detector involved in the present invention can be used to detect the intensity of ultraviolet light.

[0058] like Figure 5 As shown, according to the definition of the ultraviolet-visible light suppression ratio, it is obtained that the ultraviolet-visible light suppression ratio reaches 35 in this embodiment without the need for a filter. Among them, the ultraviolet light uses a 254nm light source, and the visible light uses a 648nm light source. Make both incident light intensity 100μW / cm 2 , respectively test the corresponding photovoltage.

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Abstract

The invention provides a zinc oxide electric bridge ultraviolet detection unit and a preparation method thereof. The zinc oxide electric bridge ultraviolet detection unit comprises four ultraviolet photoresistors, which are arranged in an electric bridge structure, and are respectively a first ultraviolet photoresistor, a second ultraviolet photoresistor, a third ultraviolet photoresistor and a fourth ultraviolet photoresistor, wherein ZnO shading layers are arranged on the second ultraviolet photoresistor, the third ultraviolet photoresistor and the fourth ultraviolet photoresistor. The zincoxide electric bridge ultraviolet detection unit provided by the invention has the characteristics of small size and low cost, and has the advantage of being easier to combine with a back-end processing circuit.

Description

technical field [0001] The invention belongs to the field of microelectronics and is used for ultraviolet detection, in particular to a zinc oxide bridge ultraviolet detection unit and a preparation method thereof. Background technique [0002] With the rapid development of integrated circuits, the size of chips is getting smaller and lighter, and the wearable electronic equipment has become a trend. Moreover, people pay more attention to the harm of ultraviolet rays, and the miniaturization of ultraviolet detection modules has become inevitable. At present, the ultraviolet detectors on the market are mainly vacuum photomultiplier tubes and Si-based photodetectors. The photomultiplier tube has the advantages of high responsivity, low noise, and fast response speed, while the Si-based photodetector technology is relatively mature, which is convenient for circuit integration. [0003] However, these traditional ultraviolet detectors still have disadvantages, such as large ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/18H01L27/144
CPCH01L31/1085H01L31/1836H01L27/1443Y02P70/50
Inventor 彭文博郭小川齐文潘子健赵小龙贺永宁
Owner XI AN JIAOTONG UNIV
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