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A kind of nitrogen dioxide sensor based on organic field effect transistor and preparation method thereof

A technology of nitrogen dioxide and transistors, which is applied in the field of nitrogen dioxide sensors based on organic field effect transistors and its preparation, can solve the problems of few characteristic parameters, low integration and low sensitivity, and achieve easy absorption, low cost, The effect of simple preparation process

Active Publication Date: 2022-08-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a nitrogen dioxide sensor based on an organic field effect transistor and its preparation method, which solves the problems of low sensitivity, few characteristic parameters and low integration in existing nitrogen dioxide sensors

Method used

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  • A kind of nitrogen dioxide sensor based on organic field effect transistor and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The preparation method is as follows:

[0042] S1: Thoroughly clean the glass substrate on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0043] S2: A PS film was prepared on ITO by spin coating to form a gate insulating layer of 100 nm;

[0044] S3: heating and baking the spin-coated PS film;

[0045] S4: spin-coating an organic semiconductor layer with a mass fraction ratio of 78%: 5%: 17% of P3HT, isoliquiritigenin and tert-butyl-4-hydroxyanisole 100 nm on the gate insulating layer;

[0046] S5: 100 nm copper source electrodes and drain electrodes are prepared by vacuum evaporation.

[0047] The nitrogen dioxide response characteristics of the device were tested, and the response to nitrogen dioxide was good at room temperature.

Embodiment 2

[0049] The preparation method is as follows:

[0050] S1: Thoroughly clean the glass substrate 1 on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0051] S2: A PMMA film was prepared on ITO by spin coating to form a gate insulating layer of 520 nm;

[0052] S3: heating and baking the spin-coated PMMA film;

[0053] S4: spin-coat an organic semiconductor layer with a mass fraction ratio of 73%: 10%: 17% of Tips-pentacene, isoliquiritigenin and tert-butyl-4-hydroxyanisole 150nm on the gate insulating layer;

[0054] S5: Prepare 10 nm silver source electrode and drain electrode by vacuum evaporation.

[0055] The nitrogen dioxide response characteristics of the device were tested, and the response to nitrogen dioxide was poor at room temperature.

Embodiment 3

[0057] The preparation method is as follows:

[0058] S1: Thoroughly clean the glass substrate 1 on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0059] S2: Prepare a PVA film on ITO by spin coating to form a gate insulating layer of 20 nm;

[0060] S3: heating and baking the spin-coated PVA film;

[0061] S4: spin-coat an organic semiconductor layer with a mass fraction ratio of 80%: 8%: 12% of Tips-pentacene, isoliquiritigenin and tert-butyl-4-hydroxyanisole 200nm on the gate insulating layer;

[0062] S5: A gold source electrode and a drain electrode of 40 nm are prepared by vacuum evaporation.

[0063] The nitrogen dioxide response characteristics of the device were tested, and the response to nitrogen dioxide was good at room temperature.

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Abstract

The invention discloses a nitrogen dioxide sensor based on an organic field effect transistor and a preparation method thereof, belonging to the field of nitrogen dioxide sensors, comprising a substrate, a gate electrode, a gate insulating layer and an organic semiconductor layer sequentially arranged from bottom to top , a source electrode and a drain electrode are arranged on the organic semiconductor layer, the organic semiconductor layer is a soluble organic semiconductor material, and the organic semiconductor layer is added with a mass fraction of 5% to 10% of isoliquiritigenin and 12% to 17% tert-butyl-4-hydroxyanisole; enhances the stability of transistor devices in air by utilizing the antioxidant properties of isoliquiritigenin and tert-butyl-4-hydroxyanisole, while isoliquiritigenin and tertiary The introduction of butyl-4-hydroxyanisole increases the charge exchange between the nitrogen dioxide molecule to be tested and the organic semiconductor, making the carrier concentration in the semiconductor layer more sensitive to the change of nitrogen dioxide concentration, and realizes the organic field effect transistor two. Nitrogen oxide sensor for precise monitoring of nitrogen dioxide.

Description

technical field [0001] The invention belongs to the field of nitrogen dioxide sensors, and relates to a nitrogen dioxide sensor based on an organic field effect transistor and a preparation method thereof. Background technique [0002] Nitrogen dioxide is an important pollutant that causes air pollution. It mainly comes from vehicle exhaust emissions and the combustion of fossil fuels. At the same time, nitrogen dioxide can cause irreversible damage to human health while causing acid rain and acid fog. Monitoring the concentration of nitrogen dioxide in the atmospheric environment is of great significance for the healthy life and production of human beings. [0003] There are many types of nitrogen dioxide sensors, including resistive nitrogen dioxide sensors, capacitive nitrogen dioxide sensors, electrolyte ionic nitrogen dioxide sensors, and weight-type nitrogen dioxide sensors. At present, the research hotspots at home and abroad are mainly resistive nitrogen dioxide sen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/30H01L51/40G01N27/414
CPCG01N27/4141G01N27/4148H10K71/10H10K71/12H10K71/13H10K71/16H10K71/164H10K71/40H10K85/60H10K10/488H10K71/00
Inventor 于军胜范惠东张大勇钟建
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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