Composition containing supported chi iron carbide and theta iron carbide, preparation method of composition, catalyst, application of catalyst and Fischer-Tropsch synthesis method
A technology of Fischer-Tropsch synthesis and iron carbide, which is applied in chemical instruments and methods, preparation of liquid hydrocarbon mixtures, catalysts for physical/chemical processes, etc., can solve the problem of high selectivity of by-products, achieve simple and easy raw materials, and simple operation steps , The effect of low CO2 selectivity
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[0061] In a preferred embodiment of the present invention, the drying and roasting process includes: firstly drying the impregnated carrier at 20-30°C for 0.5-4h, and then drying drying at low temperature for 6-10 hours, drying the dried material at 110-150° C. for 3-24 hours, and then roasting the obtained material at 300-550° C. for 1-10 hours. The above drying process can be performed in an oven, and the roasting process can be performed in a muffle furnace.
[0062] Another embodiment provided by the present invention is to prepare supported θ iron carbide.
[0063] In some embodiments of the present invention, preferably, H in step (1-1) 2 Can be H 2 The form of flow is passed into the reaction system, and at the same time, by controlling the H 2 Flow pressure to control the pressure of the first reduction, preferably, in step (1-1), the pressure of the first reduction is 0.1-15atm, preferably 0.3-2.6atm; time is 0.7-15h, preferably 1 -12h.
[0064] In some embodimen...
preparation example 1
[0110] (1) Weigh 10 g of silicon oxide as a carrier, and then impregnate it with an aqueous solution of ammonium ferric citrate, wherein the aqueous solution of ammonium ferric citrate is weighed and configured according to the content of 30 wt% of elemental iron in the final carrier. Dry the impregnated carrier at 35°C for 2 hours, then dry it in a vacuum oven at a temperature of 30°C and a vacuum of 300Pa for 8 hours, dry the dried material in an oven at 120°C for 24 hours, and then dry the obtained material at a temperature of Baked in a muffle furnace at 500 °C for 5 h. Obtain a loaded iron-based precursor;
[0111] (2) Combine the precursor with H 2 At a pressure of 2.0 atm, H 2 The flow rate is 16000mL / h / g, and the second reduction is carried out at a temperature of 610°C for 1h;
[0112] (3) Cool the product obtained in step (2) to 30°C, and at 30°C 2 Inert gas contact for surface passivation treatment, O in the gas 2 The volume concentration is 1.0%, the pressure ...
preparation example 2
[0116] (a) Weigh 10 g of silicon oxide as a carrier, and then impregnate it with an aqueous solution of ammonium ferric citrate, wherein the aqueous solution of ammonium ferric citrate is weighed and configured according to the content of 30 wt% of elemental iron in the final carrier. Dry the impregnated carrier at 30°C for 3 hours, then dry it in a vacuum oven at a temperature of 35°C and a vacuum of 320Pa for 8 hours, dry the dried material in an oven at 115°C for 24 hours, and then dry the obtained material at a temperature of Baked in a muffle furnace at 500 °C for 5 h. Obtain a loaded iron-based precursor;
[0117] (b) Combine the precursor with H 2 At a pressure of 2.0 atm, H 2 The flow rate is 14000mL / h / g, and the first reduction is carried out at a temperature of 460°C for 12h;
[0118] (c) cooling the product obtained in step (b) from 460°C to 390°C at a rate of 1.5°C / min, and at this temperature with H 2 Contact with CO mixed gas to prepare the first carbide, the...
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