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A kind of cleaning solution and cleaning method for control baffle

A technology of cleaning liquid and baffle, which is applied in the field of electronic chemicals, can solve the problems of low cleaning efficiency, achieve high cleaning efficiency, high fluoride content, and increase the effect of stripping

Active Publication Date: 2021-10-12
HUBEI SINOPHORUS ELECTRONIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the problem that there are many kinds of chemicals used in the cleaning and regeneration of the control block in the existing semiconductor integrated circuit technology, and the cleaning efficiency is low. Silicon oxide, silicon nitride, polysilicon, photoresist, improve wafer regeneration efficiency

Method used

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  • A kind of cleaning solution and cleaning method for control baffle
  • A kind of cleaning solution and cleaning method for control baffle
  • A kind of cleaning solution and cleaning method for control baffle

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A kind of control baffle cleaning solution, its component content is as shown in table 2:

[0031] Table 2 Example 1 components and content

[0032]

[0033]

[0034] Configure the cleaning solution according to the components and contents listed in Table 2, take the cleaning solution and hydrogen peroxide in a volume ratio of 4:1, mix to get 20L of liquid medicine, put in silicon oxide, tetraethyl orthosilicate, silicon nitride, polysilicon, optical Each of the 5 pieces of the engraving control block was cleaned at a temperature of 60°C. After cleaning, it was cleaned with isopropanol and dried with nitrogen. The cleaning method was the same as that of the comparative example. The cleaning results are shown in Table 3.

Embodiment 2

[0036] Same as Example 1, only the fluoride is adjusted from hydrofluoric acid to a mixture of hydrofluoric acid and ammonium fluoroborate, the content of hydrofluoric acid is 20%, the content of ammonium fluoroborate is 10%, and the content of other components remains unchanged, which is set as Example 2. The cleaning steps of the control flap are the same as in Example 1.

[0037] Using the same cleaning method as the comparative example, the cleaning results are shown in Table 3. The fluoride in this example is a mixture of hydrofluoric acid and ammonium fluoroborate. Compared with Example 1, the cleaning time is slightly prolonged, but the cleaning effect is still good. , can completely remove all kinds of films.

Embodiment 3

[0039] Same as Example 1, only the fluoride is adjusted from hydrofluoric acid to a mixture of hydrofluoric acid and tetrabutylammonium fluoride, the content of hydrofluoric acid is 20%, the content of tetrabutylammonium fluoride is 10%, and the contents of the remaining components are unchanged. It is set as embodiment 3, and the cleaning steps of the control flap are the same as in embodiment 1.

[0040] Using the same cleaning method as the comparative example, the cleaning results are shown in Table 3. The fluoride in this example is a mixture of hydrofluoric acid and ammonium fluoroborate. Compared with Example 1 and Example 2, the cleaning time is slightly prolonged, but the cleaning The effect is still good, and all kinds of films can be completely removed, and the fluoride is preferably hydrofluoric acid.

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Abstract

The invention belongs to the field of electronic chemicals for integrated circuits, and in particular relates to a cleaning liquid for controlling barriers and a use method thereof. The main components of the control panel cleaning solution include fluoride, stripping agent, wetting agent, organic solvent and water; the content of fluoride is 10~30wt%, the content of stripping agent is 0.1~1wt%, the content of wetting agent is 0.1~1wt%, organic solvent The content is 25~35wt%, and the balance is water. The control barrier cleaning solution can be used to clean various types of thin films such as silicon oxide, tetraethyl orthosilicate, silicon nitride, polysilicon, and photoresist, and the control barrier has the material on it.

Description

technical field [0001] The invention belongs to the field of electronic chemicals, and in particular relates to a cleaning solution for a control plate. Background technique [0002] Wafer refers to the silicon wafer used to make silicon semiconductor circuits. Various circuit element structures are processed on the wafer to make it an IC integrated circuit with specific electrical functions. The precision requirements for manufacturing wafers are extremely high, and the flatness of the silicon wafer surface will directly affect the performance and quality of the chip. Therefore, the fab needs to monitor and test the performance of the manufacturing equipment at all times and maintain stability to ensure the final yield. The unpatterned silicon wafers used for testing and maintaining stability are control wafers and blanks. [0003] The control chip is mainly used to monitor whether the process capability of the machine is stable and whether the production environment is cl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C11D7/08C11D7/50C11D7/32C11D7/10C11D7/60C11D3/37B08B3/08
CPCB08B3/08C11D3/3707C11D7/08C11D7/10C11D7/3281C11D7/5009C11D7/5013C11D7/5022
Inventor 尹印徐子豪万杨阳贺兆波张庭冯凯王书萍倪高国
Owner HUBEI SINOPHORUS ELECTRONIC MATERIALS CO LTD