Semiconductor laser and optical fiber coupling structure

Abstract

The invention discloses a semiconductor laser and an optical fiber coupling structure, which belong to the technical field of semiconductor laser devices. The reflectivity of two cavity surfaces of a semiconductor laser chip is set to be equal, and laser is respectively output from a first light emitting surface and a second light emitting surface; a plurality of semiconductor lasers are arranged, the laser output from the first light emitting surface passes through respective lens assemblies to generate a first parallel light beam, and the laser output from the second light emitting surface passes through respective lens assemblies to generate a second parallel light beam; the first parallel light beam and the second parallel light beam simultaneously pass through the polarization beam combiner and the focusing lens after passing through the reflector and the half-wave plate and then are focused on the optical fiber, and laser is output from the two end faces of the laser chip and is of a symmetrical resonant cavity structure, so that the electro-optical conversion efficiency of the chip is improved, and the cavity surface power density is reduced; the total laser output power of a single laser chip can be improved; the optical fiber coupling structure reduces the number of chips, and is simpler and lighter in structure, small in size, light in weight and low in material consumption.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser devices, and in particular relates to a semiconductor laser and an optical fiber coupling structure. Background technique [0002] Semiconductor lasers are widely used in pumping solid-state and fiber lasers, material processing, and laser medical treatment due to their advantages such as compact structure, low cost, and easy control of the optical field. Among them, semiconductor lasers with a wavelength near 790nm are mainly used to pump Tm-doped fiber lasers, which can generate 2um infrared lasers. [0003] Due to the high photon energy of semiconductor lasers near 790nm, the cavity surface is prone to damage (COD). The (Al)GaInP / GaAsP structure without aluminum active region can effectively suppress the generation of dark line defects and reduce non-radiative recombination centers; The recombination rate increases the optical damage threshold of the cavity surface. [0004] Howev...

AI Technical Summary

Problems solved by technology

Since the resonant cavity is asymmetrical, the laser power density inside the chip is non-uniformly distributed, gradually increasing from HR to AR, which will lead to serious spatial hole burning effect, and this effect will increase and decrease with the increase of laser cavity length Electro-optic Efficiency of Semiconductor Lasers

[0006] At present, the problems of low chip output power density and spatial hole burning effect reducing the chip's electro-optical conversion efficiency in 790nm semiconductor lasers need to be solved

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