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A kind of preparation method of cesium tin iodine thin film and application thereof

A thin film, cesium iodide technology, applied in the field of preparation of cesium tin iodide thin film, can solve the problem that the stoichiometry of CsSnI3 thin film is difficult to accurately control the spatial distribution, the carrier migration length and lifetime are short, Sn and Cs vacancy defects, etc. problems, to achieve the effect of reducing vacancy defects, low price and high film quality

Active Publication Date: 2022-02-15
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

CsSnI prepared by traditional preparation methods (such as: two-step method, etc.) 3 There is a high density of Sn and Cs vacancy defects in the film, which makes the migration length and lifetime of its carriers (electrons and holes) shorter, which seriously affects its device performance
Alternate deposition of SnI by the two-step method 2 It is easy to cause the stoichiometric ratio of the CsSnI3 film to be precisely controlled in the spatial distribution by the CsI method, thus forming a large number of Sn and Cs vacancy defects

Method used

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  • A kind of preparation method of cesium tin iodine thin film and application thereof
  • A kind of preparation method of cesium tin iodine thin film and application thereof
  • A kind of preparation method of cesium tin iodine thin film and application thereof

Examples

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Embodiment 1

[0026] A kind of preparation method of cesium tin iodine film, comprises the following steps:

[0027] Put tin diiodide and cesium iodide into quartz crucibles respectively, and then heat and degas them in an ultra-high vacuum environment, and keep the vacuum in the vacuum chamber not lower than 10 -6 Pa; at the same time, blow a certain amount of liquid nitrogen into the cooling tube of the sample stage to reduce the temperature of the Au(111) substrate to -28°C; then heat the tin diiodide and cesium iodide evaporation sources to 440°C and 210°C After that, tin diiodide and cesium iodide are deposited together on the Au(111) substrate. During the deposition process, CsI and SnI 2 A better stoichiometric reaction can occur; wherein, during the deposition process, tin diiodide and cesium iodide were co-deposited at a rate of 0.5 layer / min for 30 minutes;

[0028] The cesium tin iodide film precursor deposited on the substrate was heated to 120 °C at a rate of 3.5 °C / min and an...

Embodiment 2

[0030] Same as Example 1, except that: the temperature of the Au(111) substrate is controlled at -23° C.; the annealing time is 30 min.

Embodiment 3

[0032] Same as Example 1, except that the temperature of the Au(111) substrate is controlled at -33° C., and the annealing time is 60 min.

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Abstract

The invention discloses a preparation method of a cesium tin iodine thin film, belonging to the technical field of semiconductor materials. The method comprises the following steps: S1. Under vacuum conditions, heating tin diiodide and cesium iodide to 440°C and 210°C respectively, simultaneously depositing tin diiodide and cesium iodide on the substrate, and cooling to room temperature to obtain cesium Tin-iodide thin film precursor; wherein, during the deposition process, the tin diiodide and cesium iodide were co-deposited at a rate of 0.5 layers / min for 25-35 min; the substrate temperature was -33--23°C; S2 1. Annealing the cesium tin iodine film precursor deposited on the substrate at a temperature of 100-120° C. to obtain the cesium tin iodine film. The preparation method of the cesium tin iodine thin film provided by the invention has simple process and high film quality, and is especially suitable for developing high-performance lead-free perovskite solar cells.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a preparation method and application of a cesium tin iodine thin film. Background technique [0002] At present, a class of organic-inorganic hybrid perovskite semiconductors (AMX3, A is a cation, common are methylamine (MA), formina (FA), cesium (Cs), etc., X is Cl, I, Br, etc.) due to Its excellent photoelectric performance has been applied to planar heterojunction solar cells. There are two key difficulties in promoting the widespread application of this organic-inorganic perovskite solar cell: (1) It is necessary to make this organic-inorganic hybrid perovskite lead-free to make it more green and environmentally friendly. (2) The thermal stability of this organometallic perovskite material with excellent optoelectronic properties needs to be further improved. On the one hand, tin (Sn) and germanium (Ge) are expected to replace the congener lead (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24C23C14/06C23C14/58H01L51/42H01L51/46
CPCC23C14/24C23C14/0694C23C14/5806H10K30/15H10K2102/00Y02E10/549
Inventor 佘利敏谢振杨张伟风
Owner HENAN UNIVERSITY
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