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Plasma-treated gallium oxide-based solar-blind ultraviolet detector and preparation method thereof

A technology of ultraviolet detector and gallium oxide, which is applied in the field of photoelectric detection, can solve problems such as not meeting expectations, and achieve the effects of improving photoelectric performance, improving interface quality, and reducing vacancy defects

Pending Publication Date: 2022-05-27
ZHEJIANG SCI-TECH UNIV
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Problems solved by technology

[0004] In order to reduce the dark current of the detector and improve the technical problems such as responsivity, many enterprises and scientific research institutes have carried out a lot of research, but they have not achieved the expected results. Therefore, how to solve the above problems is very important for gallium oxide solar blind ultraviolet detectors The application in the field of high-voltage corona detection has important realization significance

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  • Plasma-treated gallium oxide-based solar-blind ultraviolet detector and preparation method thereof
  • Plasma-treated gallium oxide-based solar-blind ultraviolet detector and preparation method thereof
  • Plasma-treated gallium oxide-based solar-blind ultraviolet detector and preparation method thereof

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Embodiment Construction

[0026] In order to better illustrate and describe the content of the present invention, the following will be described in conjunction with the accompanying drawings and implementation examples:

[0027] Have Figure 1-Figure 3 As shown, the present invention discloses a plasma-treated gallium oxide-based solar-blind UV detector, comprising a substrate 1, a gallium oxide film 2, a plasma-treated interface layer 3 and an electrode 4; the substrate 1 is sapphire, and the The plasma-treated interface layer 3 is formed by using plasma to perform surface treatment on the gallium oxide thin film 2 , and a metal electrode 4 is disposed on the plasma-treated interface layer 3 .

[0028] Preferably, the gallium oxide film 2 is one or more of an amorphous gallium oxide film and a crystalline gallium oxide film.

[0029] Preferably, the material of the electrode 4 is one or more of Au, Ag, Ti, Pt, In, Al, Ni and ITO.

[0030] Preferably, the plasma-treated interface layer 3 is obtained...

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Abstract

The invention discloses a plasma-treated gallium oxide-based solar-blind ultraviolet detector and a preparation method thereof. The plasma-treated gallium oxide-based solar-blind ultraviolet detector comprises a substrate, a gallium oxide thin film, a plasma-treated interface layer and an electrode, the substrate is sapphire, the plasma processing interface layer is formed by performing surface treatment on the gallium oxide thin film by adopting plasma, a metal electrode is arranged on the plasma processing interface layer, and the surface treatment of the thin film is performed through the plasma, so that the vacancy defect in the gallium oxide thin film is effectively reduced; the interface quality is improved, and the photoelectric property of the ultraviolet detector is greatly improved. The gallium oxide-based ultraviolet detector has the advantages that the prepared gallium oxide-based ultraviolet detector is stable in performance, can effectively detect solar-blind ultraviolet light with the wavelength smaller than 280 nm, has the advantages of being high in sensitivity and response speed, small in dark current and the like, and is particularly suitable for corona detection application in various severe environments such as a high-voltage power transformation system and a high-voltage power transmission line.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a plasma-treated gallium oxide-based solar-blind ultraviolet detector and a preparation method thereof. Background technique [0002] Transparent Conductive Oxide β-Ga 2 O 3 It is a new type of wide band gap semiconductor with a band gap of about 4.9 eV at room temperature and a breakdown electric field strength of 8 MV / cm. β-Ga 2 O 3 It has excellent chemical and thermal stability and high transmittance of UV-visible light. At the same time, it is easy to obtain good n-type conductivity by doping, which can meet the requirements of good conductivity and high optical transmittance required by transparent conductive electrodes at the same time. And it has a wide range of applications in the field of solar-blind photodetectors, especially in the field of high-voltage corona detection. Selecting the detection of corona discharge in the solar-blind band can obtain...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/09H01L31/18
CPCH01L31/0216H01L31/09H01L31/18Y02P70/50
Inventor 赵天丽阮迪清胡海争邢志文钱松程郭道友王顺利
Owner ZHEJIANG SCI-TECH UNIV
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