NORD flash manufacturing method and device and storage medium
A manufacturing method, polysilicon gate technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of aggravating the consumption of OXspacer at the top of the memorycell control gate, unfavorable ILD filling, impact, etc., to reduce ILD filling shortage and Cell disturbance The effect of the risk
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no. 1 example ；
[0041] The invention provides a kind of NORD flash manufacture method, comprises the following steps:
[0042] S1, such as Figure 8 As shown, the memory cell area and the peripheral circuit polysilicon gate area are formed on the silicon substrate, and polysilicon is deposited;
[0043] S2, such as Figure 9 As shown, photolithography and etching remove polysilicon, high-voltage oxide layer and silicon nitride in the memory cell area, retain the polysilicon gate polysilicon of the peripheral circuit, and spin-coat photoresist on the polysilicon gate polysilicon of the peripheral circuit;
[0044] S3, such as Figure 10 As shown, the photolithography and etching of the control gate contact hole in the memory cell area, and the removal of photoresist in the polysilicon gate area of the peripheral circuit;
[0045] S4, such as Figure 11 As shown, after depositing a hard mask in the memory cell area and the polysilicon gate area of the peripheral circuit, spin-coat photo...
no. 2 example ；
[0049] The invention provides a kind of NORD flash manufacture method, comprises the following steps:
[0050] S1, such as Figure 8 As shown, the memory cell area and the peripheral circuit polysilicon gate area are formed on the silicon substrate, and polysilicon is deposited;
[0051] S2, such as Figure 9 As shown, photolithography and etching remove the polysilicon, high-voltage oxide layer and silicon nitride in the memory cell area to expose the control gate polysilicon, retain the polysilicon gate polysilicon of the peripheral circuit, and spin-coat photoresist on the polysilicon gate of the peripheral circuit;
[0052] Among them, the polysilicon in the memory cell area is removed by dry etching, and the high-voltage oxide layer and silicon nitride are removed by wet etching;
[0053] S3, such as Figure 10 As shown, the control gate contact hole in the memory cell area is photolithography and etched until the silicon substrate is exposed, and the photoresist is re...
no. 3 example ；
[0059] The present invention provides a NORD flash device, which is manufactured by the NORDflash manufacturing method described in the above-mentioned first embodiment or second embodiment, which includes:
[0060] The memory cell area and the peripheral circuit polysilicon gate area arranged side by side on the silicon substrate;
[0061] The memory cell area includes the word line polysilicon on the silicon substrate, the floating gate and the control gate formed beside the word line polysilicon on the silicon substrate, the dielectric layer on both sides of the word line polysilicon on the control gate, and the dielectric layer on both sides of the control gate. The storage gate, and the isolation sidewalls on both sides of the gate of the memory cell area;
[0062] The peripheral circuit polysilicon gate area includes the trench on the upper part of the silicon substrate, the gate oxide on the silicon substrate and in the trench, the peripheral circuit polysilicon gate fo...
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