Polycrystalline silicon reduction furnace inner wall coating device and method

Abstract

The invention discloses a crystalline silicon reduction furnace inner wall coating device and method. The crystalline silicon reduction furnace inner wall coating device comprises a base, a heating device, a gas exchange device and a power supply device, wherein the base is provided with at least two gas replacement holes; a hollow target material is the same as a bell jar in shape and smaller than the bell jar, the material of the target material is the same as the target material of a coating film, and the target material is arranged in the bell jar; the bell jar and the target material are positioned on the base; the bell jar is provided with a jacket, and a flowing medium with heat can be injected into the jacket; the heating device is arranged in the target material and is used for heating the target material; the gas exchange device is used for performing gas replacement on the space between the bell jar and the target material; when the target material is arranged in the bell jar, the gas replacement holes are positioned in a space between the target material and the bell jar; and the power supply device is provided with a positive electrode connected with the bell jar and a negative electrode connected with the target material. According to the crystalline silicon reduction furnace inner wall coating device, the ultrathin metal film with uniform structure and strong binding force can be prepared on the inner wall of a polycrystalline silicon reduction furnace, and each position of the inner wall of the bell jar can be coated at the same time, so that the problem of stress concentration or residue caused by segmented coating is solved.

Description

technical field [0001] The invention relates to the field of polysilicon preparation, in particular to a coating device and method for the inner wall of a polysilicon reduction furnace. Background technique [0002] Polysilicon is the basic material of silicon-based solar cells and silicon-based semiconductor devices. At present, the modified Siemens method of growing polysilicon using a bell-type chemical vapor deposition reactor (polysilicon reduction furnace) is the mainstream method for producing polysilicon. Austenitic stainless steel alloys are usually selected to manufacture polysilicon reduction furnaces. During the operation of the polysilicon reduction furnace, the thermal radiation emitted by the high-temperature silicon rods is absorbed by the inner wall of the furnace and lost in the form of heat energy. According to statistics, the heat radiation loss accounts for more than 60% of the total operating energy of the polysilicon reduction furnace. [0003] A lay...

AI Technical Summary

Problems solved by technology

In the prior art, the traditional spraying-based film preparation process of the inner wall of the reduction furnace is highly complex. During the spraying process, the reduction furnace bell jar and the spray gun need to make relative movements, and the bell jar needs to continue to rotate at a relatively high speed. has a certain risk

In addition, the spraying method cannot obtain native films with dense tissue and low surface roughness

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