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Low-dielectric-constant polyimide film and preparation method thereof

A technology of polyimide film and low dielectric constant, which is applied in the field of low dielectric constant polyimide film and its preparation, can solve the problems of lowering mechanical properties, increasing dielectric constant of polyimide composite materials, and adhesion Poor problems, to achieve the effect of reducing the dielectric constant, reducing interface polarization, and increasing thermal stability

Active Publication Date: 2021-04-20
SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high price of fluorine-containing monomers, the increase in economic costs, and the poor adhesion between the fluorine-containing polyimide film and the metal substrate, it cannot be widely used in industrialization.
However, creating pores in the polyimide matrix will reduce its mechanical properties
Therefore, adding substances containing holes is currently the most ideal method to reduce the dielectric constant of polyimide, but it is difficult for the filler material to disperse evenly in the polymer, and the agglomeration of polymer fillers will cause interfacial polarization, resulting in polyimide Rising dielectric constant of composite materials

Method used

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  • Low-dielectric-constant polyimide film and preparation method thereof
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  • Low-dielectric-constant polyimide film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Under nitrogen, add 4.7073g 4,4-diaminodiphenyl ether into 100mL of N,N-dimethylformamide solution, wait until 4,4-diaminodiphenyl ether is completely dissolved, then add 7.2927g 3 , After 3'4,4'-biphenyltetracarboxylic dianhydride was reacted for 2 hours, 12g of glass microspheres were added and stirred for 3 hours, then 7.4386g of pyridine and 9.6005g of acetic anhydride were added at 80°C for 6 hours. Wash and dry with 150 mL of ethanol to obtain glass microspheres with a core-shell structure. Add 1.5g of the above-mentioned modified glass microspheres into 100mL of N,N-dimethylformamide solution and sonicate for 2h, then add 5.9792g of 4,4-diaminodiphenyl ether under nitrogen, and wait until it is completely dissolved Add 9.2632g of 3,3'4,4'-biphenyltetracarboxylic dianhydride and react for 2 hours to obtain a hybrid solution of modified glass microspheres and polyimide precursor. The above-mentioned hybrid solution of modified glass beads and polyimide precursor w...

Embodiment 2

[0030] Under nitrogen, add 4.7073g 4,4-diaminodiphenyl ether into 100mL of N,N-dimethylformamide solution, wait until 4,4-diaminodiphenyl ether is completely dissolved, then add 7.2927g 3 , After 3'4,4'-biphenyltetracarboxylic dianhydride was reacted for 2 hours, 12g of glass microspheres were added and stirred for 3 hours, then 7.4386g of pyridine and 9.6005g of acetic anhydride were added at 80°C for 6 hours. Wash and dry with 150 mL of ethanol to obtain glass microspheres with a core-shell structure. Add 3 g of the above-mentioned modified glass microspheres into 100 mL of N,N-dimethylformamide solution and sonicate for 2 hours, then add 5.9792 g of 4,4-diaminodiphenyl ether under nitrogen, wait until it is completely dissolved, then add 9. 2632 g of 3,3'4,4'-biphenyltetracarboxylic dianhydride was reacted for 2 hours to obtain a hybrid solution of modified glass microspheres and polyimide precursors. The above-mentioned hybrid solution of modified glass beads and polyimid...

Embodiment 3

[0032] Under nitrogen, add 4.7073g 4,4-diaminodiphenyl ether into 100mL of N,N-dimethylformamide solution, wait until 4,4-diaminodiphenyl ether is completely dissolved, then add 7.2927g 3 , After 3'4,4'-biphenyltetracarboxylic dianhydride was reacted for 2 hours, 12g of glass microspheres were added and stirred for 3 hours, then 7.4386g of pyridine and 9.6005g of acetic anhydride were added at 80°C for 6 hours. Wash and dry with 150 mL of ethanol to obtain glass microspheres with a core-shell structure. Add 4.5g of the above-mentioned modified glass microspheres into 100mL of N,N-dimethylformamide solution and sonicate for 2h, then add 5.9792g of 4,4-diaminodiphenyl ether under nitrogen, and wait until it is completely dissolved Add 9.2632g of 3,3'4,4'-biphenyltetracarboxylic dianhydride and react for 2 hours to obtain a hybrid solution of modified glass microspheres and polyimide precursor. The above-mentioned hybrid solution of modified glass beads and polyimide precursor w...

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Abstract

The invention discloses a low-dielectric-constant polyimide film and a preparation method thereof. The surface modification method of the glass microsphere comprises the step of coating the surface of the glass microsphere with a polyimide polymer to form a core-shell structure. The preparation method comprises the step of adding the modified glass microspheres into the polyimide polymer, stirring to uniformly disperse the glass microspheres, and finally coating the polyimide film on the base material. Compared with an existing polymer filler surface modification technology, the method has the advantages that operation steps are simplified, and meanwhile damage to the filler structure and performance is avoided. The modified glass microspheres have better binding force with a polyimide matrix than the glass microspheres before modification, and the interfacial polarization phenomenon between two phases is avoided. And the dielectric constant and the dielectric loss can be further reduced. Therefore, the low-dielectric-constant polyimide film can be widely applied to industries such as electronics, microelectronics, aerospace and the like.

Description

technical field [0001] The invention belongs to the field of polyimide composite materials, and in particular relates to a low dielectric constant polyimide film and a preparation method thereof. Background technique [0002] With the development of integrated circuits toward miniaturization and refinement, the reduction of resistance caused by the interaction of interconnection lines on integrated circuits and the delay caused by line capacitance have become urgent problems for the development of the electronics industry. The most effective method is to develop an interlayer with an ultra-low dielectric constant, so many low dielectric constant materials have been developed. However, in addition to low dielectric constant, low dielectric materials should also have good mechanical properties, thermal stability, low moisture absorption and radiation resistance. Among them, polyimide (PI) has good physical and chemical properties and has become a candidate material for the in...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08L79/08C08K7/28
Inventor 李科黄丙亮彭明云王龙
Owner SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
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