Preparation method of phase change memory based on nano current channel

Abstract

The invention discloses a preparation method of a phase change memory based on a nano current channel. The preparation method comprises the following steps of growing a first electrode layer on a substrate; depositing and growing an insulating layer on the first electrode layer; etching the insulating layer to the first electrode layer by using a photoetching process, and forming a groove of which the bottom surface is a metal electrode layer; preparing a nano current channel layer with metal crystal grains in the groove, wherein the metal crystal grains penetrate through the thickness of the layer; depositing a phase change material above the nano current channel layer; and depositing a second electrode layer above the phase change material to form the phase change memory with the nano current channel layer. According to the method, the contact area between the phase change layer and the electrode layer is greatly reduced through the nanoscale conductive channel, the current density of a local contact part is greatly improved, and heat production efficiency of current in the phase change layer is improved; electric heating utilization efficiency of the phase change layer is improved; and the process is simple, so operation power consumption of the phase change memory can be easily reduced.

Description

technical field [0001] The invention belongs to the technical field of phase-change memory, and more specifically relates to a preparation method of a phase-change memory based on a nanometer current channel. Background technique [0002] With the advent of the information age, memory plays an increasingly important role in our daily life. At present, research on memory has been developing in the direction of high speed, low power consumption, and high stability. Among them, the phase change memory (PCRAM) made by utilizing the phase change property of materials has great potential in the semiconductor market. [0003] The basic principle of phase-change memory is that phase-change materials can be reversibly switched between crystalline and amorphous states, and use the huge difference in resistance between different states of the material to realize "1" and "0" data storage. The commonly used phase-change materials are chalcogenides. By controlling the amplitude and pulse...

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Problems solved by technology

[0007] Aiming at the defects of the prior art, the present invention provides a method for preparing a phase-change memory based on a nano-current channel. problems, and increase the current density in the contact area, improve the heat generation efficiency, and improve the heat utilization efficiency, so that the phase change memory can reduce the write power consumption without reducing the cell size and without improving the process.

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