Manufacturing method of advanced-generation TFT-grade fine-grain ITO target material
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 韶关市欧莱高纯材料技术有限公司
- Publication Date
- 2021-04-30
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Abstract
Description
technical field
[0001] The invention relates to the technical field of ITO target material manufacturing, in particular to a manufacturing method of high-generation TFT grade fine-grain ITO target material. Background technique
[0002] Indium tin oxide target, referred to as ITO target, is a mixture of two metal oxides, indium oxide and tin oxide, which is sintered at high temperature to form a ceramic functional material. The ITO target material sintered with tin oxide doped indium oxide can form an ITO transparent conductive film on transparent substrates such as glass after vacuum magnetron sputtering coating, which is a necessary key material for the liquid crystal display panel industry.
[0003] At present, the feasible sintering methods for ITO target production include hot pressing, hot isostatic pressing, pressure atmosphere sintering and atmospheric pressure sintering. The forming of the blank before the target sintering includes slip casting, compression molding...