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Method for improving light-emitting efficiency of light-emitting diode

A technology of light-emitting diodes and luminous efficiency, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the luminous efficiency of devices, and achieve the effect of improving luminous efficiency, coupling efficiency and charge injection efficiency

Active Publication Date: 2021-04-30
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Transparent electrodes are an important part of light-emitting diodes, which have a crucial impact on the light outcoupling and charge injection of light-emitting diodes, thus significantly affecting the luminous efficiency of the device

Method used

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  • Method for improving light-emitting efficiency of light-emitting diode
  • Method for improving light-emitting efficiency of light-emitting diode

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Such as figure 1 As shown, in this embodiment, the light-emitting diode has a bottom-emitting structure, and the anode uses a single-layer graphene 102 on the surface of a polyethylene terephthalate (PET) transparent substrate 101 as a transparent electrode. Use anti-reflection dopant film 103 (its thickness is 10 nanometers) between anode and luminescent layer 104, and the composition of this film is tetrapentafluorophenylboronic acid or other light transmittances 80~100% have anti-reflection effect p-type dopant, the cathode uses an aluminum thin film 105 (thickness is 100 nanometers), and the aluminum thin film 105 is located on the light emitting layer 104. An anti-reflective dopant film, a light-emitting layer and an aluminum film cathode are sequentially formed on the surface of the single-layer graphene anode. The tetrapentafluorophenylboronic acid thin film simultaneously improves the light extraction rate of the light-emitting layer on the anode side and the h...

Embodiment 2

[0024] The difference from Example 1 is:

[0025] Such as figure 2 As shown, in the present embodiment, the light-emitting diode is a top-emitting structure, the aluminum film 202 (its thickness is 150 nanometers) on the surface of the glass transparent substrate 201 is used as the transparent cathode at the bottom, and the carbon nanotube film 205 (its thickness is 10 nanometers) is used. ) as the top transparent anode. A light-emitting layer 203, a tetrapentafluorophenylboronic acid film 204 and a carbon nanotube film transparent anode are sequentially formed on the surface of the aluminum film cathode, and the external quantum efficiency of the light-emitting diode is 20%.

Embodiment 3

[0027] The difference from Example 1 is:

[0028] In this embodiment, the light-emitting diode is a fully transparent structure, and the anode adopts a single-layer graphene on the surface of a polyethylene terephthalate (PET) transparent substrate as a transparent electrode, and the cathode adopts a carbon nanotube film (its thickness is 8 nanometers). ). A tetrapentafluorophenylboronic acid film, a light-emitting layer and a carbon nanotube film cathode are sequentially formed on the surface of the single-layer graphene anode, and the external quantum efficiency of the light-emitting diode reaches 30%.

[0029] The results of the examples show that the method of the present invention introduces an anti-reflection dopant film between the transparent electrode and the light-emitting layer, and simultaneously improves the light outcoupling efficiency and charge injection efficiency of the transparent electrode through the anti-reflection dopant film, thereby improving the light...

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Abstract

The invention relates to the field of manufacturing of light-emitting diodes, and especially relates to a method for improving the light-emitting efficiency of a light-emitting diode through an anti-reflection dopant film. According to the method, an anti-reflection type dopant film is introduced between a transparent electrode and a light-emitting layer, and the optical external coupling efficiency and the charge injection efficiency of the transparent electrode are improved at the same time through the anti-reflection type dopant film, so that the light-emitting efficiency of the light-emitting diode is improved; waveguide mode coupling is promoted to enter the transparent electrode by utilizing the optical anti-reflection effect of the thin film, so that the light extraction rate of the light-emitting diode is improved; and meanwhile, the transparent electrode is doped by utilizing the surface charge transfer effect of the thin film to improve the work function, so that the charge injection efficiency of the electrode is improved. The method does not need to use a complex micro-nano structure, is high in compatibility with a manufacturing process of the light-emitting diode, and provides a simple and effective technical approach for developing the high-performance light-emitting diode.

Description

Technical field: [0001] The invention relates to the production field of light-emitting diodes, in particular to a method for improving the luminous efficiency of light-emitting diodes through an anti-reflection dopant film, which is applicable to various electroluminescent diodes including light-emitting layers and transparent electrode structures. Background technique: [0002] Light-emitting diodes have increasingly widespread applications in the fields of display and lighting. Transparent electrodes are an important part of light-emitting diodes, which have a crucial impact on the light outcoupling and charge injection of light-emitting diodes, thus significantly affecting the luminous efficiency of the device. Existing technologies are mainly aimed at the improvement of a single performance, such as: using micro-nano structures to improve the outcoupling efficiency of waveguide mode or substrate mode, and using chemical dopants to improve the work function and conductiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/42
CPCH01L33/44H01L33/42
Inventor 马来鹏任文才杜金红张鼎冬成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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