Hub type dicing blade, preparation method thereof and application of hub type dicing blade in gallium arsenide material processing

A gallium arsenide, wheel hub technology, applied in the field of processing tools, can solve the problems of slow growth of single crystals, weak mechanical strength of materials, and high prices
CN112746304AActive Publication Date: 2021-05-04赛尔科技(如东)有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
赛尔科技(如东)有限公司
Publication Date
2021-05-04

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Abstract

The invention discloses a hub type dicing blade, a preparation method thereof and application of the hub type dicing blade in gallium arsenide material processing. An aluminum alloy matrix is subjected to chemical treatment after being ground, and then is put into diamond electroplating liquid for electroplating, and an electroplated blade is obtained; the electroplated blade is subjected to outer circle finishing and lathe machining, then chemical exposure is carried out, then polishing is carried out, and the hub type dicing blade is obtained; and the diamond electroplating liquid is composed of diamond, nickel sulphamate, cobalt sulphamate, nickel sulfate, boric acid and water. The invention discloses the novel dicing blade which is ultrathin, the thickness of the dicing blade is 10-15 microns, and the dispersity of grinding materials is good; and when gallium arsenide materials are processed, a notch is narrow, no crack exists, and the cutting film entering rate is low.
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Description

technical field

[0001] The invention belongs to the technology of processing tools, and in particular relates to a wheel-hub type scribing knife, a preparation method thereof and an application in gallium arsenide material processing. Background technique

[0002] With the rapid development of the semiconductor industry in recent years, various new semiconductor materials have emerged, and gallium arsenide material is one of them. Gallium arsenide material (GaAs) has a high electron mobility (about 5.7 times that of silicon material) and a wide bandgap structure compared with traditional silicon materials. Under the same conditions, it can conduct current faster. We can use gallium arsenide semiconductor materials to prepare microwave devices, which play a key role in satellite data transmission, mobile communication, GPS global navigation and other fields. Of course, gallium arsenide materials also have some disadvantages, such as high melting point and vapor pressure, di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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