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An annealing method, composite film and electronic component

A technology of composite thin film and electronic components, which is applied in the direction of electrical components, circuits, ion implantation plating, etc., can solve problems such as bonded body cracking, achieve the effect of avoiding mutual pulling or falling off, and eliminating lattice damage

Active Publication Date: 2022-07-29
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The application provides an annealing method, a composite thin film and an electronic component, which can be used to solve the technical problem of cracking the bonding body in the process of eliminating lattice damage in the prior art

Method used

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  • An annealing method, composite film and electronic component
  • An annealing method, composite film and electronic component

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Experimental program
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Effect test

Embodiment 1

[0059] The lithium niobate thin film substrate (a thin film wafer substrate) is implanted with hydrogen ions to obtain a thin film wafer. The thin film wafer and the substrate wafer are bonded to obtain a bonded body, and the bonded body is subjected to low temperature heat treatment at 320° C., so that the thin film layer and the residual layer are separated by a separation layer to obtain a composite thin film structure.

[0060] Further, the thin film layer is polished, and a mask layer made of photoresist is prepared on the thin film layer.

[0061] Nitrogen ion implantation is performed in the mask layer near the thin film layer at 1 μm, and the instantaneous high temperature generated by the ion implantation is used to eliminate the lattice damage in the thin film layer. Finally, the masking layer is removed using acetone.

Embodiment 2

[0063] Helium ion implantation is performed on the lithium niobate thin film substrate to obtain a thin film wafer. The thin film wafer and the substrate wafer are bonded to obtain a bonded body, and the bonded body is subjected to low temperature heat treatment at 250° C., so that the thin film layer and the residual layer are separated by a separation layer to obtain a composite thin film structure.

[0064] Further, the thin film layer is polished, and a mask layer made of silicon nitride is prepared on the thin film layer.

[0065] Carbon ions are implanted in the mask layer near the thin film layer 2 μm, and the instantaneous high temperature generated by the ion implantation is used to eliminate the lattice damage in the thin film layer. Finally, the mask layer is removed by wet etching with phosphoric acid, and the thin film layer after removing the mask layer is polished.

Embodiment 3

[0067] Helium ion implantation is performed on the lithium niobate thin film substrate to obtain a thin film wafer. The thin film wafer and the substrate wafer are bonded to obtain a bonded body, and the bonded body is subjected to low-temperature heat treatment at 300° C., so that the thin film layer and the residual layer are separated by a separation layer to obtain a composite thin film structure.

[0068] Further, the thin film layer is polished, and a mask layer made of silicon dioxide is prepared on the thin film layer.

[0069] Carbon ions are implanted in the mask layer at a position of 2.5 μm near the thin film layer, and the instantaneous high temperature generated by the ion implantation is used to eliminate the lattice damage in the thin film layer. Finally, the mask layer is removed by etching with hydrofluoric acid, and the thin film layer after removing the mask layer is polished.

[0070] The annealing method provided in the embodiment of the present applicat...

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Abstract

The present application provides an annealing method, a composite film and an electronic component. The method provided by the present application includes: preparing a composite thin film structure by combining ion implantation and bonding, and the composite thin film structure includes a substrate layer and a thin film layer from bottom to top; preparing a mask layer on the thin film layer; At the preset position of , perform instantaneous high temperature treatment on the mask layer and the thin film layer; remove the mask layer subjected to the instantaneous high temperature treatment. The method provided by the present application can not only effectively eliminate the lattice damage caused to the thin film layer during the ion implantation process, but also because the annealing method provided by the present application uses instantaneous high temperature for annealing, so the substrate layer will not be in a high temperature environment for a long time, and furthermore It is also avoided that the layers are pulled or peeled off from each other caused by the high temperature on the substrate layer.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to an annealing method, a composite film and an electronic component. Background technique [0002] The combination of ion implantation and bonding separation is a common method for preparing thin film layers (ie, active layers). Specifically, firstly, particles capable of generating gas are injected into the thin film wafer base (the initial state of the material used to make the thin film layer), so as to form a separation layer in the thin film wafer base, and the thin film layers and the thin film layers on both sides of the separation layer. Residual layer. Then, the thin film layer and the pre-prepared substrate wafer are bonded to form a bonded body. Finally, the bonding body is heated to break the separation layer, thereby separating the thin film layer from the residual layer. [0003] The above method will damage the crystal lattice in the thin fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/324H01L21/266H01L21/02C23C14/48
CPCH01L21/324H01L21/266H01L21/0201C23C14/48
Inventor 王金翠张涛张秀全胡卉刘桂银刘阿龙
Owner JINAN JINGZHENG ELECTRONICS
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