Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoelectric conversion element and manufacturing method thereof

A technology for photoelectric conversion elements and manufacturing methods, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve problems such as current flow, and achieve the effect of reducing the variation of dark current

Pending Publication Date: 2021-05-07
SUMITOMO CHEM CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even in the state where light is not incident, a weak current flows through the photoelectric conversion element

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric conversion element and manufacturing method thereof
  • Photoelectric conversion element and manufacturing method thereof
  • Photoelectric conversion element and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0333] (Preparation of Coating Liquid for Active Layer Formation)

[0334] The coating liquid for forming an active layer according to this embodiment can be prepared by a known method. For example, it can be prepared by the following method: mixing the first solvent and the second solvent to prepare a mixed solvent, adding a p-type semiconductor material and an n-type semiconductor material to the obtained mixed solvent; adding p A method of adding an n-type semiconductor material to a second solvent, and then mixing the first solvent and the second solvent to which each material was added; and the like.

[0335] The first solvent and the second solvent, and the p-type semiconductor material and n-type semiconductor material may be heated to a temperature not higher than the boiling point of the solvents and mixed.

[0336] After mixing the first solvent and the second solvent, and the p-type semiconductor material and n-type semiconductor material, the resulting mixture can...

Embodiment 1

[0373] Production and evaluation of photoelectric conversion elements

[0374] (Manufacture of photoelectric conversion elements)

[0375] An ITO thin film (cathode) was formed to a thickness of 150 nm on a glass substrate by a sputtering method. The surface of this glass substrate was subjected to ozone UV treatment.

[0376] Next, 1% by weight of polyethyleneimine ethoxylate (PEIE) aqueous solution (manufactured by Aldrich, trade name polyethyleneimine, 80% ethoxylated solution) was mixed with 10 g of 3-pentanol. , weight average molecular weight 110000) and 1 g of a solution containing 10% by weight of a zinc oxide / isopropanol dispersion (manufactured by TAYCA, product name: HTD-711Z) to prepare a coating solution for forming an electron transport layer.

[0377] The obtained coating solution for forming an electron transport layer was applied onto an ITO thin film of an ozone UV-treated glass substrate by a spin coating method to form a coating film.

[0378] The glass...

Embodiment 2

[0411] A photoelectric conversion element was produced and evaluated in the same manner as in Example 1 except that 2-propanol was used instead of 3-pentanol used as a solvent in the coating liquid for forming an electron transport layer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
boiling pointaaaaaaaaaa
boiling pointaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The present invention reduces the dark current ratio. This photoelectric conversion element (10) includes: an anode (16); a cathode (12); an active layer (14) provided between the anode and the cathode; and at least one layer of an electron transport layer (13) provided between the active layer and the cathode. The electron transport layer includes an insulating material and a semiconductor material, and the difference between the work function of the electron transport layer and the work function of the cathode is 0.88 eV or greater. With the photoelectric conversion element, furthermore, the active layer includes a p-type semiconductor material and an n-type semiconductor material, and a work function (Wf1) of the electron transport layer and a LUMO energy level (LUMO) of the n-type semiconductor material satisfy formula (2): |LUMO|-Wf1>=0.06 eV (2).

Description

technical field [0001] The present invention relates to a photoelectric conversion element and a manufacturing method thereof. Background technique [0002] Photoelectric conversion elements are extremely useful devices from the viewpoint of, for example, saving energy and reducing carbon dioxide emissions, and are attracting attention. [0003] A photoelectric conversion element is an element including at least a pair of electrodes including an anode and a cathode, and an active layer provided between the pair of electrodes. In the photoelectric conversion element, either electrode is made of a transparent or semitransparent material, and light is incident on the active layer from the side of the transparent or semitransparent electrode. Charges (holes and electrons) are generated in the active layer by energy (hν) of light incident on the active layer, and the generated holes move to the anode and the electrons move to the cathode. [0004] And, the charges that have rea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L27/146H01L27/30H01L51/42H01L51/44H10K99/00
CPCH01L27/146Y02E10/549Y02P70/50G06V40/1318H10K39/32H10K85/215H10K85/113H10K30/30H10K30/152G06F21/32H10K30/81H10K85/211
Inventor G·费拉拉西美树
Owner SUMITOMO CHEM CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com