Charged particle beam drawing device, charged particle beam drawing method, and program

Abstract

The purpose of the present invention is to correct, in a highly accurate manner, positional displacement due to a charging phenomenon. A charged particle beam drawing device (100), provided with: an irradiation amount distribution calculation unit (33) for calculating the irradiation amount distribution of a charged particle beam using a pattern density distribution and dose distribution; a fogging charged particle amount distribution calculation unit (34) for convolution-integrating each of the irradiation amount distribution and the respective distribution function for a plurality of fogging charged particles, and thereby calculating a plurality of fogging charged particle amount distributions; a charge amount distribution calculation unit (35) for calculating the charge amount distribution due to direct charging using the pattern density distribution, the dose distribution, and the irradiation amount distribution, and calculating the charge amount distribution due to a plurality of fogging charges using the plurality of fogging charged particle amount distributions; a positional displacement amount calculation unit (38) for calculating the positional displacement amount of the drawing position on the basis of the charge amount distribution due to direct charging and the charge amount distribution due to the plurality of fogging charges; a correction unit (42) for correcting the irradiation position using the positional displacement amount; and a drawing unit (150) for irradiating the corrected irradiation position with a charged particle beam.

Description

technical field [0001] The present invention relates to a charged particle beam drawing device, a charged particle beam drawing method, and a program. Background technique [0002] Along with the high integration of LSI, the circuit line width required by semiconductor devices has become smaller and smaller year by year. In order to form a desired circuit pattern on a semiconductor device, a high-precision original drawing pattern (mask, or especially used in a stepper or scanning exposure device) that will be formed on quartz using a reduced projection exposure device is used. Also known as a reticle) reduction transfer method onto a wafer. High-precision original painting patterns are drawn by an electron beam drawing device, using so-called electron beam lithography. [0003] When an electron beam is irradiated to a substrate such as a mask, the irradiation position or its surroundings are charged by the electron beam irradiated in the past, and the irradiation position...

AI Technical Summary

Problems solved by technology

However, in the conventional electrification correction, there is a problem that the dimensional accuracy required recently cannot be adequately met in a part of the area.

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