Method for preparing nano ITO powder at low temperature

A nano-powder technology, applied in the field of low-temperature preparation of nano-ITO powder, can solve the problem of high temperature resistance of equipment, achieve soft reaction conditions, high temperature resistance of equipment, and good crystallization status

Active Publication Date: 2021-05-28
株洲火炬安泰新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing nano-ITO powder at low temperature, which solves the problem that the existing hydrothermal preparation process requires high temperature resistance of equipment

Method used

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  • Method for preparing nano ITO powder at low temperature
  • Method for preparing nano ITO powder at low temperature
  • Method for preparing nano ITO powder at low temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0042] Embodiment 1: a kind of method for preparing nano-ITO powder at low temperature, such as figure 1 shown, including the following steps:

[0043] S1, preparation of aqua regia solution

[0044] Concentrated hydrochloric acid and concentrated nitric acid are made into 80ml of aqua regia solution at a volume ratio of 1:3;

[0045] S2, dissolve, mix

[0046] Take 40ml of aqua regia solution, then weigh 16g of metal indium (99.99%) and 3.4g of tin tetrachloride to dissolve them in the aqua regia solution in turn, stir evenly, set aside to obtain In 2 o 3 : SnO 2 A mixture with a weight ratio of 9:1;

[0047] S3, coprecipitation

[0048] Under stirring, sodium hydroxide solution is added to the mixture obtained in step S2, so that the mixture is neutral, and after the two co-precipitate, the colloidal precursor of indium hydroxide and tin hydroxide is obtained;

[0049] S4, filter, wash

[0050] Wash the colloidal precursor obtained in step S3 with distilled water for...

Embodiment 2

[0067] Embodiment 2: a kind of method for preparing nano-ITO powder at low temperature, the difference with embodiment 1 is, comprises the following steps:

[0068] S1, preparation of aqua regia solution

[0069] Concentrated hydrochloric acid and concentrated nitric acid are made into 80ml of aqua regia solution at a volume ratio of 1:3;

[0070] S2, dissolve, mix

[0071] Take 40ml of aqua regia solution, then weigh 10g of metal indium (99.99%) and 3g of tin tetrachloride to dissolve them in the aqua regia solution in turn, stir evenly, set aside to obtain In 2 o 3 : SnO 2 A mixture with a weight ratio of 8:1;

[0072] S3, coprecipitation

[0073] Under stirring, sodium hydroxide solution is added to the mixture obtained in step S2, so that the mixture is neutral, and after the two co-precipitate, the colloidal precursor of indium hydroxide and tin hydroxide is obtained;

[0074] S4, filter, wash

[0075] Wash the colloidal precursor obtained in step S3 with distilled...

Embodiment 3

[0078] Embodiment 3: a kind of method for preparing nano-ITO powder at low temperature, the difference with embodiment 1 is, comprises the following steps:

[0079] S1, preparation of aqua regia solution

[0080] Concentrated hydrochloric acid and concentrated nitric acid are made into 80ml of aqua regia solution at a volume ratio of 1:3;

[0081] S2, dissolve, mix

[0082] Take 40ml of aqua regia solution, then weigh 10g of metal indium (99.99%) and 3g of tin tetrachloride to dissolve them in the aqua regia solution in turn, stir evenly, set aside to obtain In 2 o 3 : SnO 2 A mixture with a weight ratio of 8:1;

[0083] S3, coprecipitation

[0084] Under stirring, sodium hydroxide solution is added to the mixture obtained in step S2, so that the mixture is neutral, and after the two co-precipitate, the colloidal precursor of indium hydroxide and tin hydroxide is obtained;

[0085] S4, filter, wash

[0086] Wash the colloidal precursor obtained in step S3 with distilled...

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Abstract

The invention discloses a method for preparing nano ITO powder at low temperature, and belongs to the technical field of nano ITO powder processing. The method comprises the following steps of S1, preparation of an aqua regia solution: using concentrated hydrochloric acid and concentrated nitric acid to prepare the aqua regia solution according to the volume ratio of 1:3; S2, dissolving and mixing: taking 40 ml of aqua regia solution, then weighing 10-20 g of metal indium and 3-5 g of tin tetrachloride, sequentially dissolving the metal indium and the tin tetrachloride in the aqua regia solution, and uniformly conducting stirring for later use to obtain a mixture; S3, co-precipitation: adding a sodium hydroxide solution into the mixture obtained in the step S2 while stirring, and carrying out co-precipitation on the sodium hydroxide solution and the mixture to obtain a colloid precursor of indium hydroxide and tin hydroxide; S4, filtering and washing: washing the colloid precursor obtained in the step S3 with distilled water for 2-4 times to obtain indium tin hydroxide; and S5, reaction. The invention solves the problem that an existing hydrothermal preparation process has high requirement on temperature resistance of equipment.

Description

technical field [0001] The invention relates to the technical field of nano-ITO powder processing, more specifically, it relates to a method for preparing nano-ITO powder at low temperature. Background technique [0002] Indium tin oxide ITO is an important semiconductor ceramic material, the main component of which is In 2 o 3 , SnO 2 , to enhance its conductivity by doping tetravalent tin into the indium oxide lattice. Due to its excellent comprehensive properties such as transparency, conductivity, heat insulation, infrared reflection, and radar wave transmission, ITO thin films have broad application prospects in high-tech fields such as optoelectronics, sensors, solar energy, and wide-spectrum stealth. The electrodes effectively decompose industrial waste. ITO thin films prepared by using ITO targets through vacuum coating and other methods have become indispensable key materials for flat panel displays such as TFT-LCD and PDP, and have also promoted the development...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/626C04B35/01
CPCC04B35/6268C04B35/01C04B2235/3293C04B2235/5454
Inventor 唐智勇
Owner 株洲火炬安泰新材料有限公司
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