Method for growing copper-based lead-free perovskite single crystal by low-temperature solvent method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 江苏第二师范学院
- Publication Date
- 2021-05-28
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Abstract
Description
technical field
[0001] The invention belongs to the field of new material preparation, in particular to a low-temperature solvent growth method of copper-based lead-free perovskite single crystal. Background technique
[0002] Lead-based perovskite is a cost-effective optoelectronic semiconductor material. Lead-based perovskites have high light absorption efficiency, long carrier lifetime and diffusion length, and low defect density. As a new generation of solar energy conversion materials, they can not only match the photoelectric conversion efficiency of traditional silicon-based solar cells, but also have more Low manufacturing cost, simpler production process and other advantages. However, the inherent instability and toxicity of lead-based perovskites have raised serious concerns about the viability of lead-based perovskites, hindering the large-scale commercial use of solar cells and similar devices based on these materials.
[0003] Therefore, the development of hig...