Method for growing copper-based lead-free perovskite single crystal by low-temperature solvent method

A technology based on lead-free perovskite and solvent method, which is applied in the direction of solution, single crystal growth, crystal growth, etc. , the effect of stable crystal growth and high solubility

Active Publication Date: 2021-05-28
江苏第二师范学院
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  • Abstract
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  • Application Information

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Problems solved by technology

The reported copper-based perovskite Cs 3 Cu 2 x 5 Most of them are thin film materials or nano crystallites, although large-size Cs can be grown by Bridgman method high temperature molten salt method at present. 3 Cu 2 x 5 Single crystal, however, the growth equipment of this method is relatively large, the growth temperature is high, and the growth steps are complicated, so there are disadvantages of high production cost and time-consuming

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  • Method for growing copper-based lead-free perovskite single crystal by low-temperature solvent method
  • Method for growing copper-based lead-free perovskite single crystal by low-temperature solvent method
  • Method for growing copper-based lead-free perovskite single crystal by low-temperature solvent method

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Embodiment 1

[0033] Embodiment 1 discloses an all-inorganic copper-based perovskite crystal Cs 3 Cu 2 I5 The preparation method mainly comprises the following steps:

[0034] Step 1: Weigh 7.779g (ie 0.03mol) of cesium iodide (purity about 99.5%) and 3.809g (ie 0.02mol) of copper iodide (purity about 98%), put the two medicines into a 100ml beaker , and then transfer 8ml of N,N-dimethylformamide and 2ml of dimethyl sulfoxide (ie DMF:DMSO=4:1) to a 100ml beaker with a pipette gun, and then place the beaker at 60 degrees Celsius Stir at constant temperature on a magnetic stirrer for 12 hours to fully dissolve and react the medicine.

[0035] Step 2: Take a clean 100ml beaker and filter the precipitated powder in the solution with qualitative filter paper to obtain a clear, transparent orange-yellow saturated solution.

[0036] Step 3: Seal the filtered clear, transparent orange-yellow saturated solution with a parafilm, and continue to grow on a hot plate at 90°C for 24 hours at a constan...

Embodiment 2

[0045] Embodiment 2 discloses another all-inorganic copper-based perovskite crystal Cs 3 Cu 2 I 5 Preparation method, the production steps of this method are the same as in Example 1, the difference is mainly that the cesium iodide in step 1 is replaced by cesium bromide, and the solvent N,N-dimethylformamide in the cleaning solution is configured in step 4 It was replaced with N,N-dimethylformamide alone with dimethyl sulfoxide, and the result proved that the product obtained in this example also has the characteristics of regular performance, good crystal quality, and good luminescent performance.

Embodiment 3

[0046] Example 3 discloses another all-inorganic copper-based perovskite crystal Cs 3 Cu 2 I 5 Preparation method, the production steps of this method are the same as in Example 1, the difference is mainly that the cesium iodide in step 1 is replaced by cesium chloride, and the solvent N,N-dimethylformamide in the cleaning solution is configured in step 3 By replacing dimethyl sulfoxide with γ-butyrolactone alone, the result proves that the product obtained in this example also has the characteristics of regular performance, good crystal quality, and good luminescent performance.

[0047] In summary, the present invention adopts low-temperature solvent method to grow high-quality, large-sized Cs 3 Cu 2 x 5 For single crystal, there is no need to use a large-scale high-temperature single crystal growth furnace for experiments, and the growth equipment is cheap and the growth method is simple. Compared with the reported high-temperature growth method of all-inorganic lead-b...

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Abstract

According to the method for growing the copper-based lead-free perovskite single crystal through the low-temperature solvent method, an organic mixed solution is used as a crystal growth solvent, and the high-quality and large-size Cs3Cu2X5 single crystal can be rapidly grown through the reaction of CsX and CuX under the condition that the temperature is lower than 100 DEG C. The method disclosed by the invention has the characteristics of short manufacturing period, low cost, easiness in operation, environmental friendliness and the like, the size of the synthesized crystal can reach a super-centimeter magnitude, and the diffraction angle of the grown single crystal is less than 0.03 degree.

Description

technical field [0001] The invention belongs to the field of new material preparation, in particular to a low-temperature solvent growth method of copper-based lead-free perovskite single crystal. Background technique [0002] Lead-based perovskite is a cost-effective optoelectronic semiconductor material. Lead-based perovskites have high light absorption efficiency, long carrier lifetime and diffusion length, and low defect density. As a new generation of solar energy conversion materials, they can not only match the photoelectric conversion efficiency of traditional silicon-based solar cells, but also have more Low manufacturing cost, simpler production process and other advantages. However, the inherent instability and toxicity of lead-based perovskites have raised serious concerns about the viability of lead-based perovskites, hindering the large-scale commercial use of solar cells and similar devices based on these materials. [0003] Therefore, the development of hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/14C30B29/12
CPCC30B7/14C30B29/12
Inventor 王迪葛传楠韩美娜
Owner 江苏第二师范学院
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