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Low-energy cured photoresist, and resist pattern and preparation method thereof

A resist pattern and photoresist technology, applied in the photoresist field, can solve the problems of slow curing rate of photocurable resin, reduced photoresist resolution, low photoresist gel rate, etc., and achieves easy scale. Production, excellent resolution, wide range of absorption spectrum effects

Pending Publication Date: 2021-05-28
SHENZHEN SAPIENCE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the related technologies mentioned above, the inventor believes that there are the following technical problems: the energy at the edge of the spot is lower than the energy at the center of the spot. When the photocurable resin in the related art receives the energy irradiation at the edge of the spot, the photocuring The resin cures at a slower rate, resulting in a lower gel fraction of the photoresist, reducing the resolution of the photoresist

Method used

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  • Low-energy cured photoresist, and resist pattern and preparation method thereof
  • Low-energy cured photoresist, and resist pattern and preparation method thereof
  • Low-energy cured photoresist, and resist pattern and preparation method thereof

Examples

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Effect test

preparation example 1

[0044] Preparation Example 1: Preparation of A with a molecular weight of 88w

[0045] S1, weigh methpropionate, methyl methacrylate, and butyl acrylate, and put them into the reactor according to the mass ratio of 22:71:7;

[0046] S2, feed N into the reactor 2 , Add manganese dioxide into the reactor with a weight ratio of butyl acrylate: manganese dioxide of 10:1, control the temperature at 56°C, and react at 50r / min for 5h to obtain A.

preparation example 2

[0047] Preparation Example 2: Preparation of A with a molecular weight of 100w

[0048] S1, weigh methpropionate, methyl methacrylate, and butyl acrylate, and put them into the reactor according to the mass ratio of 22:71:7;

[0049] S2, feed N into the reactor 2 , Add manganese dioxide into the reactor with butyl acrylate: manganese dioxide weight ratio of 7:1, control the temperature at 62°C, and react at 50r / min for 6h to obtain A.

preparation example 3

[0050] Preparation example 3: the preparation of A with a molecular weight of 109w

[0051] S1, weigh methpropionate, methyl methacrylate, and butyl acrylate, and put them into the reactor according to the mass ratio of 22:71:7;

[0052] S2, feed N into the reactor 2 , Add manganese dioxide into the reactor with butyl acrylate: manganese dioxide weight ratio of 5:1, control the temperature at 65°C, react at 50r / min for 7h, and obtain A.

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Abstract

The invention relates to the field of photoresists, and particularly discloses a low-energy cured photoresist, and a resist pattern and a preparation method thereof. The low-energy cured photoresist comprises the following components in parts by weight: A: 30-80 parts of a carboxyl-containing acrylate polymer, B: a photodegradable conjugated oligomer, C: 3-15 parts of a photopolymerization initiator, D: 1-30 parts of a melamine derivative, and E: 1-10 parts of a diamine compound, wherein and the sum of the parts by weight of the component A and the component B is 100 parts. The invention further discloses a resist pattern, which is prepared from the photoresist. The preparation method of the resist pattern comprises the following steps: weighing A, B, C, D and E, uniformly mixing to prepare an ethanol solution, and spraying to form a photosensitive film; pressing the photosensitive film on a FPC substrate; projecting a circuit pattern to cure the photoresist; and cleaning to obtain the resist pattern. The photoresist disclosed by the invention is low in energy, fast in curing and high in resolution ratio; the resist pattern is small in thickness and high in resolution; and the method is simple to operate and high in preparation efficiency.

Description

technical field [0001] The present application relates to the field of photoresist, more specifically, it relates to a low-energy cured photoresist, a resist pattern and a preparation method thereof. Background technique [0002] Photoresist, also known as photoresist, is a key chemical material in microfabrication technology, and its solubility, adhesion and other properties will change significantly before and after exposure; photoresist is mainly used to transfer circuit patterns Preparation of microelectronic circuits on substrates, as well as microfabrication of integrated circuits and semiconductor discrete devices. [0003] The Chinese invention patent with the authorized notification number CN101162365B discloses a photosensitive resin composition and its preparation method and film-forming method. The composition includes 18%-65% of photocurable resin, 30%-80% of organic solvent and 0.02 -6%, the composition can be applied to photoresist; when illuminated, light sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/075H05K3/06
CPCG03F7/004G03F7/075H05K3/064
Inventor 王继宝周翠苹
Owner SHENZHEN SAPIENCE TECH CO LTD
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