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Increasing color gamut performance and efficiency in quantum dot color conversion layers

A region and sub-pixel technology, applied in nonlinear optics, diodes, instruments, etc., can solve problems such as optical efficiency reduction and difficulties

Pending Publication Date: 2021-05-28
SHOEI CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In thin (approximately 3-10 micron) layers using NS films, this can be difficult due to its limited optical density in such layers
Filters can be added to absorb any remaining blue light that has passed through the green and / or red conversion material, but the optical efficiency will be reduced since the filters cannot transmit green and / or red light with perfect efficiency

Method used

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  • Increasing color gamut performance and efficiency in quantum dot color conversion layers
  • Increasing color gamut performance and efficiency in quantum dot color conversion layers
  • Increasing color gamut performance and efficiency in quantum dot color conversion layers

Examples

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Embodiment approach

[0090] Figure 6 The cross-sectional structure of a barrier-coated light-emitting nanostructure (NS) 600 according to one embodiment is illustrated. Quantum dots are an example of NS 600 . In some embodiments, a population of NSs 600 may be contained within a layer of light emitting nanostructures 236 . Barrier coated NS 600 includes NS 601 and barrier 606 . NS 601 comprises a core 602 and a shell 604 . Core 602 contains a semiconductor material that emits light when higher energies are absorbed. Examples of semiconductor materials for core 602 include indium phosphide (InP), cadmium selenide (CdSe), zinc sulfide (ZnS), lead sulfide (PbS), indium arsenide (InAs), indium gallium phosphide (InGaP) , cadmium zinc selenide (CdZnSe), zinc selenide (ZnSe) and cadmium telluride (CdTe). Any other II-VI, III-V, ternary or quaternary semiconductor structure exhibiting a direct bandgap may also be used. In one embodiment, core 602 may also include one or more dopants such as metals...

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Abstract

Embodiments of a display device are described. The display device includes a liquid crystal display (LCD) module and a backlight unit designed to emit a primary light in a first wavelength region of an electromagnetic (EM) spectrum. The LCD module includes an array of pixels having at least one pixel with a sub-pixel that includes a layer of luminescent nanostructures and a layer of fluorescent material. The layer of luminescent nanostructures absorbs the primary light and emits a second light in a second wavelength region of the EM spectrum different from the first wavelength region. The layer of fluorescent material absorbs the primary light that has passed through the layer of luminescent nanostructures, and emits a third light in the second wavelength region of the EM spectrum.

Description

technical field [0001] The present invention relates to a display device comprising a phosphor film with light emitting nanostructures such as quantum dots (QDs). Background technique [0002] Luminescent nanostructures (NSs) such as quantum dots (QDs) represent a class of phosphors that possess the ability to emit light at a single spectral peak with narrow linewidths to produce highly saturated colors. The emission wavelength can be adjusted based on the size of the NS. NS is used to create NS films that can be used as color down conversion layers in display devices (eg, liquid crystal display (LCD) devices, organic light emitting diode (OLED) display devices). The use of color down-converting layers in emissive displays can be achieved by down-converting white, blue, or ultraviolet (UV) light to more reddish light, greener light, or both before the light passes through a color filter. Improve system efficiency. Such use of a color down-conversion layer can reduce light...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/13357
CPCG02F1/133617G02F1/133614G02F1/133624H10K59/38H10K2102/331H01L33/06
Inventor E·C·李I·珍-拉·普兰特
Owner SHOEI CHEM IND CO LTD