Carbon-metal structure and method for manufacturing carbon-metal structure
A manufacturing method and structure technology, which are applied in the manufacture of discharge tubes/lamps, cold cathodes, electrode systems, etc., can solve the problems of high cost, difficult CNT fixation, and difficult to apply products, etc.
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Embodiment 1
[0074] As Example 1 of the present invention, the method for manufacturing a CNT device utilizing an embodiment of the present invention ( figure 2 ) CNT devices 1a, 1b that can be applied to emitters of X-ray devices were fabricated. In this embodiment, as the heat-resistant uneven substrate 6, a Si substrate is used, as the metal base 4, a copper base with a diameter of 6 mm and a thickness of 4.5 mm is used, and as the solder, an Ag-Cu alloy is used. . In addition, Fe was used for the catalyst 7, and AlO was used for the support layer 8. x .
[0075] First, the Si substrate whose surface was filed with sandpaper was treated with hydrofluoric acid to remove SiO 2 . Then, anisotropic etching was performed for 30 minutes in a 2wt% NaOH / 20vol% isopropanol aqueous solution at 80° C. to form a texture of 5 μm to 10 μm (STEP 1 ). Next, 4 nm of Fe and 15 nm of Al were loaded on the surface of the Si substrate using RF magnetron sputtering (STEP 2 ). Al is oxidized when it co...
Embodiment 2
[0082] In Example 2, a CNT device 11 having an Ag-Cu solder layer having a thickness of 26.7 μm was produced. In this embodiment, a Si substrate is used as the heat-resistant concavo-convex substrate 6 , and a copper base having a φ of 6 mm and a thickness of 4.5 mm is used as the metal base 4 . In addition, in the description of Example 2, a detailed description of the same steps as in Example 1 (steps of STEP1 to STEP3) will be omitted (the same applies to Examples 3 to 7).
[0083] First, except that the annealing during CNT synthesis was 3 minutes and C 2 h 2 Except that the partial pressure was 0.5 Torr, STEP 1 to STEP 3 were carried out in the same manner as in Example 1, and CNTs were synthesized on a Si substrate. Subsequently, Ag and Cu were co-deposited on the CNTs grown on the Si substrate for 75 seconds to form a solder layer 3 (Ag-Cu solder layer) on the surface of the CNT layer 2 (STEP4). Prepare raw material with Ag: Cu=72:28wt%, in vacuum (for example 10 -4...
Embodiment 3
[0087] In Example 3, a CNT device 12 having an Ag solder layer having a thickness of 35.3 μm was fabricated. In this example, the CNT device 12 was fabricated by the same method as in Example 2 except that the type of solder was different.
[0088] First, CNTs were synthesized on a Si substrate by the same method as in STEP1 to STEP3 of Example 2. Subsequently, in vacuum (eg 10 -4 Pa), Ag was vapor-deposited on the CNT grown on the Si substrate for 40 seconds, and the solder layer 3 (Ag solder layer) was formed on the surface of the CNT layer 2 (STEP 4).
[0089] The metal pedestal 4 was provided on the solder layer 3, and the metal pedestal 4 was brazed to the CNT layer 2 by heating under the conditions of 800° C. and 10 Torr of Ar for 5 minutes (STEP 5). After brazing, the metal base 4 was peeled off from the Si substrate (heat-resistant concavo-convex substrate 6) to manufacture the CNT device 12 of Example 3 (STEP 6).
[0090] Such as Figure 7 As shown, the CNT layer ...
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Abstract
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