The invention discloses a PVT method high-quality
single crystal growth thermal
field device and method, and belongs to the technical field of
single crystal preparation. The invention solves the problems that the existing device and method for preparing the
single crystal by the PVT method are easy to cause
seed crystal damage and the prepared single
crystal is poor in quality. A
crucible body is inverted, a
graphite cylinder is installed in the
crucible body through a supporting structure, a
raw material containing area is formed among the side wall of the
crucible body, the bottom face of the crucible body, the outer wall of the
graphite cylinder and the supporting structure, and the
raw material containing area is filled with raw materials; a
wafer is fixedly installed on the inner wall of the crucible body and located below the supporting structure, a guide cylinder and a supporting
graphite cylinder are sequentially installed below the
wafer, a crucible cover and the crucible body are installed in a matched mode, a
seed crystal support is installed in the crucible cover, seed crystals are arranged in the crucible body through the
seed crystal support, and the outer wall of the crucible body and the outer wall of the crucible cover are wrapped with graphite heat preservation materials. The
crystal prepared by the
single crystal growth device and method is high in quality, and the seed
crystal is not easy to damage during preparation of the crystal.