Silicon carbide epitaxial furnace reaction chamber

Abstract

The invention discloses a silicon carbide epitaxial furnace reaction chamber. The reaction chamber comprises a quartz tube, a first sealing flange, a second sealing flange and a sealing piece, a water cooling jacket is arranged on the periphery of the quartz tube, a reaction device is arranged in the quartz tube, the first sealing flange is arranged on the periphery of the quartz tube in a sleeving mode and abuts against the water cooling jacket, the second sealing flange is connected with the first sealing flange, the sealing piece is clamped between the first sealing flange and the second sealing flange, a heat insulation barrel is arranged in the second sealing flange, and the end part of the heat insulation barrel is propped against the reaction device. The reaction chamber has the advantages of simple and reliable structure and the like, and high-temperature failure of the sealing ring is prevented.

Description

technical field [0001] The invention relates to semiconductor manufacturing equipment, in particular to a silicon carbide epitaxial furnace reaction chamber. Background technique [0002] SiC (silicon carbide) is a representative of the third generation of new wide bandgap semiconductor materials. Due to its excellent physical, chemical and electrical properties, it is widely used in the field of power semiconductor devices, especially in high power, high voltage and some special environments. , such as high temperature, high radiation and other environments have a very important position and good application prospects. There are many methods for preparing SiC epitaxial wafers, and the most mainstream method at present is chemical vapor deposition (CVD), that is, under high temperature and low pressure environment, the C and Si atoms generated by the cracking of the process gas regenerate SiC on the substrate. [0003] In order to achieve rapid homoepitaxial growth and obta...

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