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Preparation method of semiconductive polyethylene shielding material

A technology of polyethylene and shielding materials, which is applied in the field of preparation of semi-conductive polyethylene shielding materials, can solve the problems of reduced physical and chemical properties and processing performance of shielding materials, poor thermal stability of semi-conductive shielding materials, and poor surface smoothness of shielding layers. Achieve excellent processing performance, shorten volume resistance change rate, and smooth extrusion surface

Inactive Publication Date: 2021-06-18
中广核三角洲(江苏)塑化有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with linear low-density polyethylene as the base material, the semi-conductive shielding material has poor thermal stability and thermal deformation resistance. At the same time, linear low-density polyethylene itself has relatively strong electrical insulation. In the process of manufacturing shielding, it is necessary to add a large amount of Conductive carbon black is used to improve the conductivity of the material, but the addition of a large amount of conductive carbon black greatly reduces the physical and chemical properties and processing properties of the shielding material. After thin-wall extrusion, the surface smoothness of the shielding layer is extremely poor. If the semi-conductive shielding material itself Can not guarantee smooth surface, there are uneven pits or cracks, fractures, resulting in partial discharge or insulation breakdown

Method used

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  • Preparation method of semiconductive polyethylene shielding material
  • Preparation method of semiconductive polyethylene shielding material
  • Preparation method of semiconductive polyethylene shielding material

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Embodiment 1~4

[0017] Embodiment 1~4: a kind of preparation method of semiconductive polyethylene shielding material, described semiconductive polyethylene shielding material is made up of the following components by mass, as shown in Table 1:

[0018] Table 1

[0019]

[0020] Include the following steps:

[0021] Step 1. Mix 90-105 parts of linear low-density polyethylene 7042, 15-20 parts of high-density polyethylene 6098, 10-15 parts of polyolefin, 15-20 parts of ethylene-vinyl acetate copolymer, and 40-50 parts of conductive carbon black parts, 2~5 parts of p-hydroxybenzenesulfonic acid, 10~20 parts of 5-sulfosalicylic acid and 5~10 parts of 3,6-dibromo-1,2-phenylenediamine, put into the dense Mixing machine for 2~3 minutes;

[0022] Step 2. Open the mixing chamber, and add 5~10 parts of graphite, 1~3 parts of lubricant, 1~2 parts of silicone masterbatch GT-300, 1~2 parts of polyethylene wax, and 0.5~ 1 part, and 1~3 parts of white oil 26#, put 1~3 parts into the internal mixer ac...

Embodiment 1

[0024] The lubricant of embodiment 1 is zinc stearate, the lubricant of embodiment 2 is calcium stearate, the lubricant of embodiment 3 is the mixture of zinc stearate and stearic acid, and the lubricant of embodiment 4 is calcium stearate. A mixture of calcium stearate and stearic acid;

[0025] The polyolefin of embodiment 1 and embodiment 2 is the DF810 that Japanese Mitsui Chemicals produces, and the polyolefin of embodiment 3 and embodiment 4 is the DF805 that Japanese Mitsui Chemicals produces;

[0026] The ethylene-vinyl acetate copolymer of embodiment 1 and embodiment 3 is the V4610J that Yangzi BASF produces, and the ethylene-vinyl acetate copolymer of embodiment 2 and embodiment 4 is the V5110J that Yangzi BASF produces;

[0027] The conductive carbon black of embodiment 1 and embodiment 2 is VXC72R produced by American Capote, and the conductive carbon black of embodiment 3 and embodiment 4 is VXC72 produced by American Capote.

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Abstract

The invention relates to a preparation method of a semiconductive polyethylene shielding material, which comprises the following steps: putting linear low-density polyethylene 7042, high-density polyethylene 6098, polyolefin, ethylene-vinyl acetate copolymer, conductive carbon black, p-hydroxybenzenesulfonic acid, 5-sulfosalicylic acid and 3,6-dibromo-1,2-phenylenediamine into an internal mixer according to corresponding parts by weight, and conducting mixing for 2-3 minutes; openning a mixing bin, putting graphite, a lubricant, an organic silicon master batch GT-300, polyethylene wax, an antioxidant 1010 and white oil 26# into the internal mixer, carrying out internal mixing for 10-12 minutes, and after the temperature reaches 150 DEG C, carrying out full and uniform mixing, and then carrying out discharging. The semiconductive polyethylene shielding material obtained by the invention has heat deformation resistance and low-temperature embrittlement resistance, the volume resistance change rate between 20 DEG C and 90 DEG C is shortened, the processing property of the polyethylene shielding material is excellent, the extrusion surface is smoother, and the phenomenon of cable extrusion scorching is avoided.

Description

technical field [0001] The invention belongs to the technical field of cable shielding materials, in particular to a preparation method of a semiconductive polyethylene shielding material. Background technique [0002] Semi-conductive shielding material is an important part of medium and high voltage cables. It can make the electric field distribution inside the cable more uniform, reduce the damage caused by stress concentration to the cable insulation layer, and have a great impact on the safety and service life of the cable. For a long time, many domestic research institutions and enterprises have been committed to improving the quality level of semi-conductive shielding materials in my country and narrowing the gap with the world's advanced manufacturers. The preparation process of semi-conductive shielding materials has been continuously improved, and the formula has been continuously optimized. However, limited to raw materials, industrial base, research and developme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L23/08C08L23/06C08L23/02C08K13/02C08K5/42C08K5/18C08K3/04
CPCC08L23/0815C08L2201/08C08L2207/062C08L2205/035C08K2201/014C08K2201/001C08L23/06C08L23/02C08K13/02C08K5/42C08K5/18C08K3/04
Inventor 丁子龙邹惠忠张雪良杨建锋
Owner 中广核三角洲(江苏)塑化有限公司
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