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Solar cell lamination passivation structure and preparation method thereof

A solar cell and stacking technology, applied in the field of solar energy, can solve problems such as high production cost and danger, and achieve the effects of enhancing light reflection effect and improving interface chemical passivation effect.

Pending Publication Date: 2021-06-18
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, the industrialized PERC battery is based on the passivation result of laminated layers of aluminum oxide and silicon nitride on the back side. Special gas such as TMA will be used in the deposition process of aluminum oxide film, and the production cost is high and dangerous.
On the basis of ensuring the passivation effect, the production cost and danger of the above scheme need to be further improved

Method used

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  • Solar cell lamination passivation structure and preparation method thereof
  • Solar cell lamination passivation structure and preparation method thereof
  • Solar cell lamination passivation structure and preparation method thereof

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Embodiment approach

[0104] In the present invention, as a specific embodiment, the solar cell stack passivation structure includes a P-type silicon substrate, and the front of the P-type silicon substrate is sequentially provided with an emitter junction region and a first SiN substrate from inside to outside. x film, the Ag electrode goes through the first SiN x The emitter junction area is connected behind the film, and the back of the P-type silicon substrate is sequentially provided with a second SiO 2 Film, SiO x N y film and the second SiN x film, the Al back field sequentially passes through the second SiN x Film, SiO x N y film and the second SiO 2 The film is then in contact with the P-type silicon substrate.

[0105] The emitter junction region includes the N ++ Heavy diffusion area, N + light diffusion region and the first SiO 2 membrane.

[0106] Second SiO 2 The film thickness is 0-10 nm. SiO x N y The film is deposited by PECVD with a thickness of 1nm-100nm. The seco...

Embodiment 1

[0134] This embodiment provides a solar cell stack passivation structure, such as figure 2 with image 3 As shown, the solar cell passivation structure includes a P-type silicon substrate 1, and a first dielectric layer 2, a second dielectric layer 3 and a third dielectric layer are sequentially arranged on the back of the P-type silicon substrate 1 from inside to outside. 4. After passing through the third dielectric layer 4, the second dielectric layer 3 and the first dielectric layer 2 in sequence, connect the aluminum back field 5 of the P-type silicon substrate 1, from the inside to the front of the P-type silicon substrate 1. outside sequentially set the N ++ Heavy diffusion area 7, N + light diffusion region 8 , fourth dielectric layer 9 and fifth dielectric layer 6 . A solar cell stack passivation structure provided in this embodiment also includes a front-side Ag electrode 10, and the front-side Ag electrode 10 penetrates the fifth dielectric layer 6 and the fourt...

Embodiment 2

[0151] The solar cell stack passivation structure provided in this embodiment refers to Embodiment 1, the difference is that the first dielectric layer 2 is a silicon oxide film with a thickness of 2nm, and the second dielectric layer 3 is a silicon nitride oxide film, nitrogen A laminated film composed of a silicon carbide film and a silicon carbide film, the total thickness of the laminated film is 20nm, and the refractive index is 1.7. The third dielectric layer 4 is two layers of silicon nitride films with a thickness of 20nm and 40nm respectively. + The diffusion square resistance of the light diffusion area 8 is 150ohm / sq, N ++ The diffusion resistance of the heavy diffusion region 7 is 75ohm / sq, and the fourth dielectric layer 9 is SiO 2 film with a thickness of 2nm, and the fifth dielectric layer 6 is a silicon nitride film with a thickness of 75nm and a refractive index of 2.0.

[0152] The second dielectric layer 3 is a stacked film composed of a silicon nitride oxi...

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Abstract

The invention provides a solar cell lamination passivation structure and a preparation method thereof. The solar cell lamination passivation structure comprises a P-type silicon substrate, and a first dielectric layer, a second dielectric layer and a third dielectric layer which are sequentially arranged on a back surface of the P-type silicon substrate from inside to outside. The preparation method comprises the following steps of generating a first dielectric layer on the back surface of a P-type silicon substrate, and sequentially depositing a second dielectric layer and a third dielectric layer on the first dielectric layer. The solar cell back lamination passivation structure provided by the invention contains rich hydrogen ions or hydrogen atoms and has a very good chemical passivation effect.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and relates to a solar cell lamination passivation structure and a preparation method. Background technique [0002] Solar energy is an inexhaustible renewable energy for human beings. Among the effective utilization of solar energy, solar photovoltaic utilization is the fastest growing and most dynamic research field in recent years, and it is one of the most eye-catching projects. . Monocrystalline silicon solar cells have the highest conversion efficiency and the most mature technology. For traditional P-type all-aluminum back field solar cells, the combination of the back metal and the silicon contact region and the all-aluminum doping of the back surface form the all-aluminum back field is the key factor that limits the further improvement of the efficiency, and the long-wave reflectance of the all-aluminum back field Lower, higher optical loss. In order to solve this problem, major ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1868Y02E10/50H01L31/02168H01L31/068Y02E10/547H01L31/022425H01L31/18H01L31/182H01L31/1864
Inventor 张学玲柳伟陈红简磊陈奕峰
Owner TRINA SOLAR CO LTD
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