Strippable nitride structure and stripping method thereof
A nitride, micro-nano technology, applied in semiconductor devices, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of high maintenance cost, low yield rate, expensive device manufacturing process, etc., and achieve low stripping cost and simple operation Effect
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[0089] The semiconductor device body is grown on the etch barrier.
[0094] The semiconductor device body is grown on the etch barrier.
[0095] In some embodiments of the present application, the support layer is a substrate formed with a micro-nano-pillar array. In this situation,
[0097] The various steps of preparing the strippable nitride structure in the present application can be implemented by well-known methods.
[0098] Illustratively, the nitride template layer, the etch sacrificial layer, the etch barrier layer, and the semiconductor device body may use common
[0099] In some embodiments of the present application, the etch sacrificial layer is grown using MOCVD techniques. due to the nitride
[0100] Two different epitaxial growth modes, such as lateral growth, can be achieved by controlling the growth conditions of nitride epitaxy
[0101] The formation of the micro-nano-pillar array on the substrate or on the nitride template layer can be realized using well-know...
Embodiment 1
[0113] In this example, an AlGaN etching sacrificial layer is grown on the AlN nano-pillar array, and the growth conditions are controlled to make the surface of the sacrificial layer
[0114] The specific preparation and peeling process are as follows.
[0116] First, a thick-film AlN epitaxial layer is sputtered on the sapphire substrate and the AlN is re-junctioned by means of ultra-high temperature thermal annealing.
[0117] Then adopt the mask exposure process to make the required pattern of the nano-pillar array and the mask layer on the surface of the AlN epitaxial layer,
[0119] Put the fabricated AlN template layer (together with the substrate) into the MOCVD reaction chamber, and grow the nitride with high doping concentration,
[0121] An etch barrier layer is grown on the surface of the AlGaN etch sacrificial layer with periodic pyramids, and the etch barrier layer contains
[0126] After the peeling is completed, a deep ultraviolet LED device with corresponding funct...
Embodiment 2
[0130] In this embodiment, a GaN etching sacrificial layer is grown on the GaN micro-pillar array, and the growth conditions are controlled to grow the sacrificial layer into a
[0131] The specific preparation and peeling process are as follows.
[0140] Undoped GaN was grown on the surface of the flat current diffusion layer as an etch barrier. Controlling GaN in 2D mode
[0142] Growth of a high electron mobility transistor body with a structure including a GaN channel on a planarized etch barrier
[0144] Select the electrode region on the high electron mobility transistor body to make an etched electrode, and the remaining regions are made of silicon nitride passivation
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Abstract
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