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Self-driven photoelectric detector based on In2S3 nanosheet array/Si pyramid array heterojunction

A nanosheet array and photodetector technology, applied in the field of light detection, can solve the problems of unfavorable utilization and small preparation area, and achieve the effects of low cost, simple preparation method, and remarkable photoresponse performance

Inactive Publication Date: 2021-07-02
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[Advanced Energy Materials, 2020, 10(18).] But at this stage, In 2 S 3 Nanosheets mostly use chemical vapor deposition (CVD), but In 2 S 3 Nanosheets have disadvantages such as small preparation area, which is not conducive to their application in the field of photodetectors; 2 S 3 The nanosheet array can realize the control of the size of the device and further improve the light absorption ability of the device

Method used

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  • Self-driven photoelectric detector based on In2S3 nanosheet array/Si pyramid array heterojunction
  • Self-driven photoelectric detector based on In2S3 nanosheet array/Si pyramid array heterojunction
  • Self-driven photoelectric detector based on In2S3 nanosheet array/Si pyramid array heterojunction

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Embodiment Construction

[0030] The present invention uses methods such as wet etching, hydrothermal method, argon annealing treatment, etc. to prepare In on the Si semiconductor substrate. 2 S 3 The nanosheet film layer is deposited by the DC magnetron sputtering technology on the front electrode of the metal Pd, and the metal In electrode is pressed and the metal wire is connected to form a device. When exposed to light conditions, due to the photoelectric effect and the existence of the built-in electric field, the device can exhibit obvious response performance to light when the applied voltage is 0 volts.

[0031] The present invention will be described in detail below in conjunction with the embodiments and accompanying drawings.

[0032] The present invention is an In-based 2 S 3 Self-driven photodetectors from nanosheet / Si pyramid array heterojunctions, including In 2 S 3 Nanosheet film layer and Si semiconductor substrate, Si substrate as In2 S 3 The carrier of the nanosheet film layer,...

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Abstract

The invention belongs to the technical field of optical detection, and particularly relates to a self-driven photoelectric detector. The detector sequentially comprises a metal In point electrode, a metal Pd front electrode, an In2S3 nanosheet film layer, a Si single crystal substrate and a metal In back electrode from top to bottom. The In2S3 nanosheet film layer is prepared by a hydrothermal method, an argon annealing treatment method and the like. Test results show that the prepared thin film device shows good self-driven optical detection performance and has the advantages of stable performance and the like.

Description

technical field [0001] The invention belongs to the technical field of light detection, and in particular relates to a self-driven photodetector and a preparation method thereof. Background technique [0002] A photodetector is an electronic device that converts light signals into electrical signals. Photodetectors have been widely used in biological imaging, non-destructive testing, communications, environmental monitoring and other fields. However, most of the photodetectors reported so far need to be powered, which seriously hinders the application of photodetectors in real life. [Small,2017,13(45):1701687] Therefore, it is of great significance to develop self-driven photodetectors. [0003] Indium sulfide (In 2 S 3 ) is a high-efficiency visible light absorbing material, which has the advantages of good light absorption coefficient, photoelectric sensitivity, fast carrier mobility, suitable band gap, good stability and low toxicity, and has been widely used in the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0236H01L31/0392H01L31/18
CPCH01L31/02363H01L31/0392H01L31/109H01L31/18Y02P70/50
Inventor 凌翠翠曹敏张拓
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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