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Nitrogen-doped graphene, its preparation method and application

A nitrogen-doped graphene and nitrogen source technology is applied in the fields of nitrogen-doped graphene, nitrogen-doped graphene application, and nitrogen-doped graphene preparation, which can solve the problem that the number of layers is too large and high-quality nitrogen-doped graphene cannot be obtained. Problems such as heterographene, poor product crystal form, etc., to achieve the effect of high quality, highly adjustable doping level, and excellent performance

Active Publication Date: 2021-11-19
合肥碳艺科技有限公司
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Problems solved by technology

At present, there have been schemes using magnetic rotating arc to achieve continuous and controllable preparation of graphene, but there is no precedent for using magnetic rotating arc to prepare high-quality nitrogen-doped graphene, and the existing magnetic rotating arc scheme for graphene preparation It is impossible to obtain high-quality nitrogen-doped graphene, and the products prepared by it have poor crystal form and many layers

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  • Nitrogen-doped graphene, its preparation method and application
  • Nitrogen-doped graphene, its preparation method and application
  • Nitrogen-doped graphene, its preparation method and application

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preparation example Construction

[0048] The first aspect of the present invention discloses a method for preparing nitrogen-doped graphene, comprising the following steps:

[0049] forming a rotating arc region comprising a central portion and an edge portion;

[0050] The nitrogen source is guided to the center, the carbon source is guided to the edge, and the nitrogen-doped graphene is obtained by reacting under the arc initiation.

[0051] Starting from the existing technology, the present invention innovatively proposes a method for preparing nitrogen-doped graphene. Firstly, a rotating arc area is formed, and then the nitrogen source is guided to the center of the rotating arc area, and the carbon source is guided to the rotating arc area. At the edge of the region, under the arc, the nitrogen source is activated into nitrogen-containing active molecules in the center, while the carbon source flows through the edge and rapidly cracks, and reacts with the nitrogen-containing active molecules under the act...

Embodiment 1

[0069] The magnetic rotating arc device in this embodiment refers to figure 1 , wherein the inner diameter of the annular anode 4 is 25mm, and the diameter of the rod-shaped cathode 3 is 8mm, which are all made of high-purity graphite with a purity of not less than 99.99%. The annular magnet 6 surrounding the annular anode 4 provides an axial magnetic field of 0.08T. Introduce argon gas into the magnetic rotary arc device to exhaust the air therein, and ignite the arc in the argon atmosphere to form a rotary arc area 9, with a discharge current of 120 amperes, a power of 15 kW, and a discharge pressure of 1 bar; Pure nitrogen is passed into the center of the rotating arc area 9 from the first air inlet 1, and the flow rate is 30 slm. After the electromagnetic performance is stable, ethylene is passed into the edge of the rotating arc area 9 from the second air inlet 2, and the flow rate is 2slm, the reaction was stopped after 30min, and the solid product attached to the inner ...

Embodiment 2

[0074] The magnetic rotating arc device in this embodiment refers to figure 1, wherein the inner diameter of the annular anode 4 is 25mm, and the diameter of the rod-shaped cathode 3 is 8mm, which are all made of high-purity graphite with a purity of not less than 99.99%. The annular magnet 6 surrounding the annular anode 4 provides an axial magnetic field of 0.08T. Introduce argon gas into the magnetic rotary arc device to exhaust the air therein, and ignite the arc in the argon atmosphere to form a rotary arc area 9, with a discharge current of 100 amperes, a power of 13 kW, and a discharge pressure of 1 bar; The mixed gas of nitrogen and argon is passed into the center of the rotating arc area 9 from the first air inlet 1, the flow rate of nitrogen gas is 15slm, and the flow rate of argon gas is 15slm. Pass into the edge of the rotating arc area 9, the flow rate is 4 slm, stop after 30 minutes of reaction, collect the solid product attached to the inner wall of the reaction...

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Abstract

The invention discloses a nitrogen-doped graphene and its preparation method and application. The preparation method of the nitrogen-doped graphene guides the nitrogen source to the center of the rotating arc region and the carbon source to the edge of the rotating arc region In the first part, a nitrogen-doped graphene product with high doping level and good quality is obtained, and the preparation method is simple in process and easy to realize industrialization.

Description

technical field [0001] The invention belongs to the technical field of carbon material preparation, and specifically relates to a preparation method of nitrogen-doped graphene, nitrogen-doped graphene prepared by the preparation method, and applications of nitrogen-doped graphene. Background technique [0002] Graphene is a sp 2 Carbon materials with hybrid-connected carbon atoms tightly packed into a single-layer two-dimensional honeycomb lattice structure have excellent physical, chemical, electrical, and optical properties. With the study of graphene properties, it is usually simple and effective to change the properties of graphene by doping graphene, so as to broaden the application range of graphene. [0003] Among them, since the atomic size of nitrogen atoms is similar to that of carbon atoms, it has better compatibility with graphene. Therefore, nitrogen atoms are easily doped into the graphene lattice and cause less distortion of the graphene lattice. And because...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184B01J21/18B01J27/24
CPCB01J21/18B01J27/24C01B2204/02C01B2204/04C01B2204/32C01B32/184
Inventor 王城宋明夏维东杨成鹏
Owner 合肥碳艺科技有限公司
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