HEMT device with p-GaN cap layer and preparation method

Abstract

The invention provides an HEMT device with a p-GaN cap layer and a preparation method. An exposed p-GaN layer can react with H2 to form a p-GaN passivation layer through annealing treatment in the H2 atmosphere, and etching of the p-GaN layer can be avoided; Mg in the p-GaN layer is passivated into an Mg-H bond, so that the hole concentration can be reduced, and the p-GaN layer is converted into a high-resistance p-GaN passivation layer, so that an electric leakage channel of the p-GaN layer in the HEMT device is cut off, and the gate control capability is improved; the p-GaN passivation layer can release channel two-dimensional electron gas which is located on an AlGaN / GaN heterojunction interface below the p-GaN passivation layer and is depleted originally; and the reserved thicker high-resistance p-GaN passivation layer is beneficial to reducing the current collapse of the HEMT device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a HEMT device with a p-GaN capping layer and a preparation method. Background technique [0002] As a representative of the third-generation semiconductor material, gallium nitride (GaN) has many excellent characteristics such as wide band gap, superior radiation noise resistance, high avalanche breakdown electric field, good thermal conductivity, and high electron drift rate under strong field. It is widely used in fields such as laser, LED, microwave, radio frequency and so on. [0003] The existing power semiconductor market is dominated by silicon power devices. In the past 20 years, the power density of silicon power devices has increased by 5 to 6 times every 10 years, but its power density is already close to the theoretical limit, and it is difficult to further improve Improve performance. Compared with silicon or gallium arsenide, GaN semiconductor is due to its w...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a HEMT device with a p-GaN capping layer and its preparation method, which are used to solve the problem of uneven etching and etching of the p-GaN capping layer in the prior art. corrosion damage problem

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