Light-emitting diode epitaxial wafer and preparation method thereof
A technology for light-emitting diodes and epitaxial wafers, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of light-emitting diode epitaxial wafers, poor quality of multiple quantum well layers, etc. The effect of improving crystal quality and reducing internal stress
Active Publication Date: 2022-05-13
HC SEMITEK SUZHOU
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Problems solved by technology
The existence of internal stress will lead to more defects in the epitaxial wafer, and it will easily lead to poor quality of the multi-quantum well layer, so that the luminous efficiency of the final light-emitting diode epitaxial wafer is low
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[0028] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0029] figure 1 It is a schematic structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure. Refer to figure 1 It can be seen that the embodiment of the present disclosure provides a light-emitting diode epitaxial wafer, which includes a substrate 1, a GaN buffer layer 2, a first insertion layer 3, a non-doped GaN layer 4, The second insertion layer 5 , the n-type GaN layer 6 , the third insertion layer 7 , the multi-quantum well layer 8 and the p-type GaN layer 9 .
[0030] The first insertion layer 3 , the second insertion layer 5 and the third insertion layer 7 are all AlN-Si-AlN composite structures.
[0031] Since the lattice constant of GaN is larger than that of the su...
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Abstract
The disclosure provides a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of light-emitting diodes. After the GaN buffer layer, non-doped GaN layer, and n-type GaN layer, the first insertion layer, the second insertion layer, and the third insertion layer are respectively inserted, and the first insertion layer, the second insertion layer, and the third insertion layer are AlN- Si-AlN composite structure. The tensile stress brought by the first insertion layer, the second insertion layer and the third insertion layer can offset the compressive stress brought by the growth of the GaN buffer layer, the non-doped GaN layer, and the n-type GaN layer, and the light-emitting diode epitaxial wafer obtained The surface is smoother and of better quality. Moreover, the stacked structure of the first insertion layer, the second insertion layer and the third insertion layer can also release certain stress, and the quality and luminous efficiency of the obtained light emitting diode epitaxial wafer are also improved.
Description
technical field [0001] The present disclosure relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used in traffic lights, car interior and exterior lights, urban lighting and landscape lighting, etc., and light-emitting diode epitaxial wafers are the basic structure used to prepare light-emitting diodes. A light-emitting diode epitaxial wafer usually includes a substrate and a GaN buffer layer, a non-doped GaN layer, an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer stacked sequentially on the substrate. [0003] Due to the large lattice mismatch and thermal mismatch between the GaN material and the sapphire substrate, there is a large stress. However, the gradually grown GaN buffer layer, undoped GaN layer, and n-type GaN layer are different in composition, growt...
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IPC IPC(8): H01L33/12H01L33/06H01L33/00
CPCH01L33/12H01L33/06H01L33/007
Inventor 姚振从颖董彬忠李鹏
Owner HC SEMITEK SUZHOU