Unlock instant, AI-driven research and patent intelligence for your innovation.

Grinding wheel for precise grinding of monocrystalline silicon wafers and preparation method of grinding wheel

A technology for precision grinding and single crystal silicon wafers, which is applied in grinding/polishing equipment, grinding devices, bonded grinding wheels, etc. Surface thermal damage and other problems, to achieve the effect of good self-sharpening, good surface quality and improved bonding ability

Active Publication Date: 2021-07-23
郑州伯利森新材料科技有限公司
View PDF17 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] During the surface grinding process of large-diameter and ultra-thin silicon wafers, it is easy to generate grinding stress on the grinding surface of the silicon wafer, which will cause warping and deformation of the silicon wafer. At the same time, the blockage of the grinding wheel will also cause thermal damage to the surface of the silicon wafer. Traditional The method uses the pore-forming agent to create pores, but the addition of the pore-forming agent will easily cause the abrasive and bond blocks to fall off in pieces, which will affect the surface quality of the silicon wafer and reduce the durability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grinding wheel for precise grinding of monocrystalline silicon wafers and preparation method of grinding wheel
  • Grinding wheel for precise grinding of monocrystalline silicon wafers and preparation method of grinding wheel
  • Grinding wheel for precise grinding of monocrystalline silicon wafers and preparation method of grinding wheel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) For sintered body mixing, add 4000-mesh diamond and 5000-mesh cubic silicon carbide according to the following proportions, put them into a three-dimensional mixer and mix for 1 hour, then add vitrified bond powder A and continue mixing for 1 hour, and finally add phenolic resin for mixing 1h to obtain a uniform composite powder.

[0035] Mixing mass ratio of each component in the sintered body:

[0036] Diamond: 46%

[0037] Cubic silicon carbide: 10%

[0038] Vitrified bond powder A: 32%

[0039] Phenolic resin powder: 12%

[0040] (2) The sintered body solidification process, the composite powder is placed in a steel mold, and hot-pressed at 180 degrees to form a circular block. The pressure of the press is 6MP, and the holding time is 20min.

[0041] (3) The sintered body granulation process, the sintered body is crushed with a crusher, sieved, and 80-100# granular materials are selected.

[0042] (4) Sintered body calcination process, put 80-100# pellets ...

Embodiment 2

[0056](1) For sintered body mixing, add 2000-mesh diamond and vitrified powder A in the following ratio and mix in a three-dimensional mixer for 1 hour, and finally add polyimide resin and mix for 1 hour to obtain a uniform composite powder.

[0057] Mixing mass ratio of each component in the sintered body:

[0058] Diamond: 57%

[0059] Vitrified bond powder A: 30%

[0060] Polyimide resin powder: 13%

[0061] (2) The sintered body solidification process, the composite powder is placed in a steel mold, and hot-pressed at 230 degrees to form a circular block, wherein the pressure of the press is 6MP, and the holding time is 20min.

[0062] (3) The sintered body granulation process, the sintered body is crushed with a crusher, sieved, and 80-100 mesh granules are selected.

[0063] (4) Sintered body calcination process, 80-100 mesh pellets are placed in a quartz crucible, and then the temperature is raised to 720° C. in a high-temperature furnace and kept for 3 hours.

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Granularityaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of monocrystalline silicon wafers, in particular to a grinding wheel for precise grinding of monocrystalline silicon wafers and a preparation method of the grinding wheel. The grinding wheel comprises a sintered body, a ceramic bond powder, an organic binding material, a filler (A) and a wetting agent. According to the grinding wheel for precise grinding of the monocrystalline silicon wafers and the preparation method of the grinding wheel, in the preparation process of the grinding wheel, air holes are formed among particles of the sintered body through a granulation process, and the air holes can play a role in containing chips and cooling, so that surface quality degradation caused by overheating or blockage of the silicon wafers in the grinding process is prevented. Meanwhile, the self-sharpening property of the grinding wheel is improved by adjusting the shape and the number of the air holes, the adding amount of the secondary binding agent and the sintering temperature, and the purpose of reducing the grinding stress is achieved.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon wafers, in particular to a grinding wheel for precise grinding of monocrystalline silicon wafers and a preparation method thereof. Background technique [0002] Nowadays, most ICs use monocrystalline silicon as the substrate material, which is mainly used in the substrates of integrated circuits, transistors, and epitaxial wafers. With the rapid development of IC production and manufacturing technology, the development of large diameter and ultra-thin silicon wafers has become the main development direction in the future, so higher requirements are put forward for the processing efficiency and surface quality of silicon wafers. The preparation process of 300mm silicon wafer is crystal pulling, outer circle processing and slicing. Chamfering, surface grinding, double-sided polishing, surface treatment, single-sided polishing, laser engraving, cleaning, etc. Surface grinding is a k...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24D3/14B24D3/34B24D18/00B24D7/10B24D5/10
CPCB24D3/14B24D3/342B24D3/346B24D18/0009B24D18/0072B24D18/009B24D7/10B24D5/10Y02P70/50
Inventor 李涛史冬丽马尧
Owner 郑州伯利森新材料科技有限公司