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Polishing solution for polishing surface of monocrystalline silicon wafer and preparation method of polishing solution

A technology for surface polishing and monocrystalline silicon wafers, which is applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of limiting the application range of polishing liquid, small polishing rate, and low Mohs hardness, and achieves low cost and fast polishing rate , the effect of not easy to settle

Active Publication Date: 2021-07-23
广州凌玮科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above-mentioned patents, although the dispersion and stability of colloidal silica are very good, its Mohs hardness is low and the polishing rate is small, which will limit the application range of the polishing liquid

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0056] The above-mentioned coated composite abrasive is prepared by liquid phase synthesis, and the neutral pH is controlled during the synthesis process, so that the silicon-aluminum species are evenly distributed, and at the same time, the surface precipitation of the aluminum species is controlled by acid treatment and washing, and a controllable aluminum species is formed. The silicon-coated structure improves the application range of the obtained abrasive chemical mechanical polishing. Among them, the silica-alumina oxide is prepared by a neutral gel synthesis process, the silica-alumina species are evenly distributed, the abrasive is easily dispersed in the water phase, and the formed colloidal system is stable and difficult to settle. Moreover, the surface precipitation of aluminum species can be controlled by acid treatment and washing to form a controllable aluminum-coated silicon structure, and the obtained abrasive chemical mechanical polishing has a wide range of ap...

Embodiment 1

[0061] A preparation method of a polishing liquid, comprising the following preparation steps:

[0062] Add 0.1 part of dimethyl benzyl dodecyl ammonium bromide and 0.5 part of ethylenediaminetetraacetic acid into 60 parts of deionized water, the stirring temperature is 20°C-30°C, and the stirring speed is 80r / min-120r / min , Stir evenly, and then mix 20 parts of abrasives while stirring to fully disperse the abrasives, and finally add 0.01 parts of ethylenediaminetetraacetic acid to adjust the pH value of the solution so that the pH is in the range of 7-9, and the product is ready.

[0063] Wherein, the preparation of the abrasive comprises the steps of:

[0064] Under the condition that the temperature is 30° C., 45 moles of aluminum sulfate and 75 liters of 20 wt % water glass are uniformly mixed. Inject 50L of bottom water into the stirred reaction vessel, heat up to 30°C, and add the above-mentioned water glass containing aluminum salt and 30wt% sulfuric acid to keep the ...

Embodiment 2

[0066] A preparation method of a polishing liquid, comprising the following preparation steps:

[0067] Add 0.1 part of dimethyl benzyl dodecyl ammonium bromide and 0.5 part of ethylenediaminetetraacetic acid into 60 parts of deionized water, the stirring temperature is 20°C-30°C, and the stirring speed is 80r / min-120r / min , Stir evenly, and then mix 20 parts of abrasives while stirring to fully disperse the abrasives, and finally add 0.01 parts of ethylenediaminetetraacetic acid to adjust the pH value of the solution so that the pH is in the range of 7-9, and the product is ready.

[0068] Wherein, the preparation of the abrasive comprises the steps of:

[0069] Under the condition that the temperature is 60° C., 15 moles of aluminum nitrate and 75 liters of 20 wt % water glass are uniformly mixed. Inject 50L of bottom water into the stirred reaction vessel, heat up to 30°C, and add the above-mentioned water glass containing aluminum salt and 10wt% sulfuric acid to keep the ...

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Abstract

The invention discloses a polishing solution for polishing the surface of a monocrystalline silicon wafer. The polishing solution comprises the following components in parts by weight: 20 to 60 parts of an abrasive; 0.1 to 1 part of a surfactant; 0.1 to 1 part of a metal chelating agent; 0.01 to 3 parts of a pH value regulator; 50 to 80 parts of water; wherein the abrasive is a coated composite grinding material formed by coating silicon with aluminum. The coated composite abrasive integrates the advantages and disadvantages of aluminum oxide and silicon oxide abrasives, enhances the advantages and avoids the disadvantages, so that the abrasive is easy to disperse in a water phase, a formed colloid system is stable and not easy to settle, and the coated composite abrasive has the characteristics of high polishing rate, low surface roughness and the like in the application of chemical mechanical polishing; and in combination with the characteristics of materials such as a surfactant and a metal chelating agent, the surface of the polished silicon wafer is easy to clean, and the precision of the polished silicon wafer better meets the requirements. The invention also provides a preparation method of the polishing solution.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing, in particular to a polishing liquid for polishing the surface of a single crystal silicon wafer and a preparation method thereof. Background technique [0002] With the rapid development of information technology, the information industry has become one of the leading industries in the global economy. The research and production of microelectronics and computer manufacturing play a leading role in the electronics industry. They complement each other, promote each other, and then develop rapidly, and present a development trend of high integration and high performance. special requirements. Integrated circuit (IC) manufacturing is the core of the electronic information industry. With the rapid development of the integrated circuit industry, the size of IC features is shrinking, the size of silicon wafers is increasing, and the IC process is becoming more and more complex and soph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02Y02P70/50
Inventor 胡颖妮
Owner 广州凌玮科技股份有限公司
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