InAs quantum dot laser structure based on GaAsOI substrate and preparation method

Abstract

The invention provides an InAs quantum dot laser structure based on a GaAsOI substrate and a preparation method of the InAs quantum dot laser structure. The InAs quantum dot laser structure based on the GaAsOI substrate comprises the GaAsOI substrate, a GaAs buffer layer, a lower contact layer, an AlGaAs lower barrier layer, an InAs quantum dot active region, an AlGaAs upper barrier layer and a GaAs upper contact layer which are sequentially arranged in a stacked manner. The GaAsOI substrate is a GaAs single crystal film which is obtained by being stripped from the GaAs substrate, transferred to an SOI substrate compatible with a CMOS and processed. According to the invention, the InAs quantum dot laser can be prepared on the SOI substrate compatible with a CMOS process, and the InAs quantum dot laser structure and the method are suitable for the development of silicon-based photoelectric integration without a core light source, and have wide application prospect.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and devices, in particular to a structure and a preparation method of an InAs (indium arsenide) quantum dot laser based on a GaAsOI (GaAson insulator, gallium arsenide on insulator) substrate. Background technique [0002] Silicon (Si)-based optoelectronic integration technology, as an important basis for realizing ultra-high-speed and ultra-low-loss optical interconnection technology in the future, has become an important frontier research field in the development of current information technology. The most critical issue in inter-optical interconnection is the preparation of high-quality Si-based light sources. Among lasers with various structures, quantum dot lasers have the advantages of low threshold current density, high characteristic temperature and high optical gain, especially low sensitivity to defects. Therefore, the development of Si-based quantum dot la...

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Problems solved by technology

However, the bonding of high-quality large-size substrates is still very difficult, and the bonding interface also has a great impact on device characteristics

The second type of method is to epitaxially grow III-V materials on Si substrates, but due to the difference in atomic polarity between Si and GaAs (gallium arsenide), it is easy to generate anti-phase domain problems in GaAs epitaxial materials, Moreover, there is a large lattice mismatch and thermal mismatch between the two. When GaAs is directly epitaxy on Si, controlling dislocations and microcracks on the material surface are extremely challenging world-class problems.

Although dislocations can be suppressed by epitaxial Ge (germanium) on Si substrates and then GaAs, or by epitaxial GaSb (gallium antimonide) on Si substrates, the effects are far from commercial use; although GaAs Growth on Si substrates with chamfered angles can eliminate the reverse direction and suppress dislocations to a certain extent by growing a thicker buffer layer, but this increases the difficulty of device fabrication, and there is a certain degree of material quality. the degradation of

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