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High-graphitization graphite thick film and preparation method thereof

A technology of high graphite and graphite, which is applied in the field of high graphitized graphite thick film and its preparation, can solve the problems of uneven dispersion of filler matrix and incomplete graphitization of graphite film, achieve high degree of surface and internal graphitization, and solve internal The effect of incomplete graphitization and regular microstructure

Pending Publication Date: 2021-07-30
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The object of the present invention is to provide a kind of high graphitization graphite thick film and preparation method thereof, to solve a series of problems such as uneven dispersion inside the filler matrix in the above-mentioned prior art, incomplete graphitization of graphite film, etc., the present invention is simple and easy to operate, It can improve production efficiency, reduce energy consumption, and the finished product has good electrical and thermal conductivity and a high degree of graphitization

Method used

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  • High-graphitization graphite thick film and preparation method thereof
  • High-graphitization graphite thick film and preparation method thereof
  • High-graphitization graphite thick film and preparation method thereof

Examples

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Effect test

Embodiment 1

[0051] (1) Preparation of graphite-phase carbon nitride-doped polyimide film:

[0052] Put 0.04g graphite phase carbon nitride in 10mL N-methylpyrrolidone, pressurize and ultrasonically disperse for 3h to obtain graphite phase carbon nitride dispersion; put 2.4g m-phenylenediamine in 100mL N-methylpyrrolidone, Magnetically stirred for 1 h to obtain a diamine solution.

[0053] Mix the graphite-phase carbon nitride dispersion and the diamine solution, and stir magnetically for 1 hour. Under the protection of nitrogen, add 11.6 g of bisphenol A dianhydride to the solution in batches, and react with mechanical stirring at a speed of 300 r / min for 7 hours. A polyamic acid solution was obtained, wherein the polyamic acid accounted for 14% by mass of the organic solvent, and the graphitic carbon nitride accounted for 0.29% by mass of the polyamic acid. Scrape-coat this solution on a glass plate with a thickness of 1000 μm, place the glass plate in a high-temperature oven at a tempe...

Embodiment 2

[0057] (1) Preparation of boron nitride-doped polyimide film:

[0058] Put 0.04g boron nitride in 10mL N-methylpyrrolidone, pressurize and ultrasonically disperse for 3h to obtain a boron nitride dispersion; put 5g polyimide film in 25.7mL N,N-dimethylformamide , adding the aforementioned boron nitride dispersion, and stirring evenly to obtain a polyimide glue solution containing boron nitride. Wherein polyimide accounts for 14% of the mass of the organic solvent, and boron nitride accounts for 0.29% of the mass of the polyimide. Scrape-coat this glue solution on a glass plate with a thickness of 2000 μm, place the glass plate in a high-temperature oven at a temperature of 100°C, and keep it for 1.5 hours to obtain a boron nitride-doped polyimide film with a film thickness of 108 μm .

[0059] (2) The boron nitride-doped polyimide film was placed in a carbonization furnace and carbonized at high temperature under an argon atmosphere. The end temperature of carbonization was ...

Embodiment 3

[0062] (1) Preparation of titanium carbide doped polyimide film:

[0063] Put 0.015g of titanium carbide in 10mL of N,N-dimethylformamide, pressurize and ultrasonically disperse for 2 hours to obtain a titanium carbide dispersion; mix 0.66g of p-phenylenediamine with 1.22g of 4,4'-diaminodiphenyl Ether was placed in 25.7mL N,N-dimethylformamide, and magnetically stirred for 1h to obtain a diamine solution.

[0064] Mix the titanium carbide dispersion and the diamine solution, stir magnetically for 2 hours, and under the protection of nitrogen, add 1.33g of pyromellitic dianhydride and 1.79g of biphenyltetracarboxylic dianhydride to the solution in batches at a speed of 500r / The reaction was carried out with mechanical stirring for 8 hours to obtain a polyamic acid solution, wherein the polyamic acid accounted for 14% of the mass of the organic solvent, and titanium carbide accounted for 0.3% of the mass of the polyamic acid. Squeegee-coat this solution on a glass plate with ...

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Abstract

The invention discloses a high-graphitization graphite thick film and a preparation method thereof, and belongs to the technical field of graphite thick films. The method firstly prepares a nanosheet material doped polyimide film, and then sequentially carrying out carbonization treatment and graphitization treatment on the film to obtain a high-graphitization graphite thick film. The process is simple, spraying is not needed in the preparation process, practicability is high, energy is saved, industrial production is easy to achieve, and wide industrial prospects are achieved. The graphite thick film prepared by adopting the method is light in weight and has flexibility, the introduction of a nanosheet material is beneficial to improving the graphitization degree in the polyimide thick film, and the problems that a finished product is fragile, the internal graphitization is incomplete and the like are solved, so that the electric conduction and heat conduction properties of the finished product are improved, and the application range of the finished product is widened.

Description

technical field [0001] The invention relates to the technical field of graphite thick film, in particular to a highly graphitized graphite thick film and a preparation method thereof. Background technique [0002] At present, China's 5G technology is developing rapidly, and the rise of technology has led to the upgrading of components. The heat generated by supporting components is getting bigger and bigger, and the temperature of the material surface is getting higher and higher. If the heat cannot be discharged in time, it will affect electronic components. life and overall system stability. [0003] As an important part of heat dissipation solutions, high thermal conductivity materials are in great demand for materials with light weight, strong flexibility and high thermal conductivity. Traditional metal heat dissipation materials have been used due to their shortcomings such as high density, high thermal expansion coefficient, and insufficient thermal conductivity. It i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/205C04B35/52C04B35/622
CPCC01B32/205C04B35/522C04B35/62218C04B2235/6562C04B2235/6567C04B2235/9607C04B2235/95
Inventor 张艺李帅臻郑智博蒋星池振国刘四委许家瑞
Owner SUN YAT SEN UNIV
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