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Bismuth selenide/gallium nitride ultraviolet-infrared broadband detector and preparation method thereof

A gallium nitride violet and detector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of weak light absorption, difficult to achieve high infrared response, etc., and achieve improved separation ability and excellent response. rate and response speed, the effect of simple device structure

Pending Publication Date: 2021-08-13
HARBIN INST OF TECH
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Problems solved by technology

But the two-dimensional topological insulator Bi 2 Se 3 Thin thickness, weak light absorption, difficult to achieve high infrared response

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  • Bismuth selenide/gallium nitride ultraviolet-infrared broadband detector and preparation method thereof
  • Bismuth selenide/gallium nitride ultraviolet-infrared broadband detector and preparation method thereof
  • Bismuth selenide/gallium nitride ultraviolet-infrared broadband detector and preparation method thereof

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Embodiment Construction

[0025] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings, but it is not limited thereto. Any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention should be covered by the present invention. within the scope of protection.

[0026] The present invention provides a low-cost Bi 2 Se 3 / GaN ultraviolet-infrared broadband detector, the device structure diagram is as follows Figure 5 As shown, on a 2 μm thick commercial GaN substrate, 2~3 monoatomic layers of Bi were grown by CVD 2 Se 3 layer, GaN and Bi 2 Se 3 Bi 2 Se 3 / GaN heterojunction, then on GaN substrate and Bi 2 Se 3 50 μm thick gold electrodes were vapor-deposited on the layers to prepare broadband detectors, wherein: the gold electrodes were divided into top electrodes and bottom electrodes, and the top ele...

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Abstract

The invention discloses a bismuth selenide / gallium nitride ultraviolet-infrared broadband detector and a preparation method thereof. The detector comprises a GaN substrate, a Bi2Se3 layer and a gold electrode, wherein the Bi2Se3 layer grows on the GaN substrate, a Bi2Se3 / GaN heterojunction is formed between GaN and Bi2Se3, and the gold electrode is arranged on the GaN substrate and the Bi2Se3 layer. The preparation method comprises the following specific steps: 1, growing the Bi2Se3 layer on a sapphire substrate through a CVD technology; and 2, depositing the Au electrode on the surfaces of the GaN substrate and the Bi2Se3 layer by using a magnetron sputtering technology to obtain the Bi2Se3 / GaN ultraviolet-infrared broadband detector. According to the invention, the photoelectric detector with an ultra-wide spectrum of 200-4000 nm is realized, and the single structure of the Bi2Se3 / GaN heterojunction is utilized, so wide-spectrum detection is realized. Compared with ultraviolet-infrared detection realized by superposing a plurality of ultraviolet and infrared devices, the detector of the invention is simple in structure, and the size, the power consumption and the cost of a system are reduced.

Description

technical field [0001] The invention belongs to the technical field of photoelectric imaging detection, and relates to an ultraviolet-infrared wide-band detection detector and a preparation method thereof, in particular to a bismuth selenide (BiSe) based 2 Se 3 ) / gallium nitride (GaN) heterojunction infrared-ultraviolet broadband detector and its preparation method. Background technique [0002] As the core device of modern science and technology informatization, photodetectors are devices that convert optical signals into electrical signals based on the photoelectric effect to measure optical radiation. According to their detection bands, they can be divided into ultraviolet detectors, visible light detectors, and infrared detectors. device etc. With the increasing requirements of modern informatization for optoelectronic components, photoelectric detectors must accurately detect target information under complex backgrounds and strong interference. The inherent weaknesses...

Claims

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Application Information

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IPC IPC(8): H01L31/0336H01L31/109H01L31/18
CPCH01L31/0336H01L31/109H01L31/18Y02P70/50
Inventor 王东博曾值王金忠矫淑杰赵晨晨张书博刘东昊
Owner HARBIN INST OF TECH
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