Furnace charging method for IGZO rotating target during sintering
A technology of rotating target and furnace loading, applied in furnace, charge, furnace components, etc., can solve the problems of inconsistent diameter of the top mouth and bottom mouth of the rotating target, excessive or uneven bottom resistance of the IGZO rotating target, deformation of the bottom mouth, etc.
Active Publication Date: 2021-08-24
河北恒博新材料科技股份有限公司
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Problems solved by technology
[0004] The technical problem to be solved in the present invention is to provide a furnace loading method during sintering of the IGZO rotating target, which can avoid the inconsistency of the diameters of the top opening and the bottom opening of the rotating target and the deformation of the bottom opening caused by the excessive or uneven resistance of the bottom surface of the IGZO rotating target. question
Method used
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Embodiment 1
[0038] Use the same rotating target green body as the raw material, processing method and process parameters of Comparative Example 1. And prepare a ring-shaped zinc oxide gasket (mass ratio of 97% zinc oxide and 3% indium oxide) that has been processed by cold isostatic pressing, and the pressure of the cold isostatic pressing is 250Mpa.
[0039] Place four corundum mullite pillars 7 with a height of 60 mm on the bottom of the sintering furnace, and place a corundum mullite backing plate 6 with a central hole on the corundum mullite pillar 7 to form a horizontal stable support . Around the corundum mullite backing plate 6 central holes, evenly spread one deck of treated corundum grains, the paving thickness is 5mm, and the width is as the criterion that can fully pad the zinc oxide gasket 4. And place the zinc oxide washer 4 on the paved corundum grains, use a leveler to level the zinc oxide washer 4, after the calibration is completed, evenly spread a layer of treated corun...
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Abstract
The invention discloses a furnace charging method for an IGZO rotating target during sintering. The furnace charging method is characterized in that a corundum mullite bracket is additionally arranged at the bottom of the IGZO rotating target, the position of a silicon-molybdenum rod is changed, and a specially-made zinc oxide gasket and treated corundum particles are used, so that an opening of the IGZO rotating target is uniformly shrunk, the rotating target is quickly and completely sintered, the target density is achieved, and the quality of the IGZO rotating target is improved; and the yield is ensured, the time is saved, and the energy consumption is reduced.
Description
technical field [0001] The invention relates to a furnace loading method for sintering an IGZO rotating target. Background technique [0002] IGZO (indium gallium zinc oxide) is the abbreviation of indium gallium zinc oxide, and the IGZO sputtering target is In 2 o 3 with Ga 2 o 3 A series of targets co-doped with ZnO is one of the multiple-doped ZnO systems. IGZO sputtering target has low indium content, high visible light transmittance, high infrared light reflectivity, high electrical conductivity; at the same time, it has good combination with glass materials, and also has good wear resistance and good Chemical stability, it can be used as a substitute for ITO (indium tin oxide) in many fields. For example, in flat liquid crystal display devices, IGZO thin film transistors using indium gallium zinc oxide as the semiconductor channel layer material have the advantages of high mobility, good uniformity, transparency, and simple process; in addition, LCD / OLED driven by...
Claims
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IPC IPC(8): F27D3/00C23C14/34C04B35/453
CPCF27D3/00C23C14/3414C04B35/453F27D2003/0002F27D2003/0004F27D2003/0007F27M2003/05C04B2235/3286C04B2235/3293C04B2235/77C04B2235/96
Inventor 李庆丰骆树立王建堂骆如河骆胜华骆胜磊骆利军王壮伟骆胜凯骆胜喜
Owner 河北恒博新材料科技股份有限公司