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CdS/CdSe heterojunction quantum dot with core/shell structure and preparation method of CdS/CdSe heterojunction quantum dot

A quantum dot and heterojunction technology, applied in the field of CdS/CdSe heterojunction quantum dots and its preparation, to achieve the effect of improving photoelectric conversion efficiency

Active Publication Date: 2021-08-31
NANTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the current reports on CdSe and CdS heterojunction quantum dots are CdSe / CdS core / shell structures, and there are few literature reports and application precedents on the preparation of CdS / CdSe core / shell structures.

Method used

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  • CdS/CdSe heterojunction quantum dot with core/shell structure and preparation method of CdS/CdSe heterojunction quantum dot

Examples

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Embodiment 1

[0020] Under a negative pressure environment, a mixture of 3.5g tri-n-octylphosphine oxide, 0.5g octadecylphosphonic acid and 0.1g chromium oxide was heated to 160°C for mixing; subsequently, the mixture was heated to 300°C under nitrogen protection Above, until CdO is completely dissolved, the solution is colorless and transparent; continue to heat up to 350 ° C, after the solution temperature is stable, mix 0.15g of bis(trimethylsilylmethyl)sulfide and 2.5g of tri-n-butylphosphine The solution was quickly added to the above reaction solution, and the temperature of the reaction solution was lowered to 260° C., and the reaction was maintained for 5 minutes; the reaction solution was precipitated with methanol, and then washed with toluene to obtain CdS quantum dots. The preparation of CdS / CdSe core / shell structure heterojunction is to mix the mixture of 3.5g tri-n-octylphosphine oxide, 0.3g octadecylphosphonic acid and 0.05g chromium oxide by heating to 160°C; Under the prote...

Embodiment 2

[0022] Under a negative pressure environment, a mixture of 3.5g tri-n-octylphosphine oxide, 0.5g octadecylphosphonic acid and 0.1g chromium oxide was heated to 160°C for mixing; subsequently, the mixture was heated to 300°C under nitrogen protection Above, until CdO is completely dissolved, the solution is colorless and transparent; continue to heat up to 350 ° C, after the solution temperature is stable, mix 0.15g of bis(trimethylsilylmethyl)sulfide and 2.5g of tri-n-butylphosphine The solution was quickly added to the above reaction solution, and the temperature of the reaction solution was lowered to 260° C., and the reaction was maintained for 3 minutes; the reaction solution was precipitated with methanol, and then fully washed with toluene to obtain CdS quantum dots. The preparation of CdS / CdSe core / shell structure heterojunction is to mix the mixture of 3.5g tri-n-octylphosphine oxide, 0.3g octadecylphosphonic acid and 0.05g chromium oxide by heating to 160°C; Under the...

Embodiment 3

[0024] Under a negative pressure environment, a mixture of 3.5g tri-n-butylphosphine oxide, 0.5g dodecylphosphonic acid and 0.1g chromium oxide was heated to 160°C for mixing; subsequently, the mixture was heated to 300°C under nitrogen protection Above, until CdO is completely dissolved, the solution is colorless and transparent; continue to heat up to 350 ° C, after the solution temperature is stable, mix 0.15g of bis(trimethylsilylmethyl)sulfide and 2.5g of tri-n-butylphosphine The solution was quickly added to the above reaction solution, and the temperature of the reaction solution was lowered to 260°C, and the reaction was maintained for 7 minutes; the reaction solution was precipitated with methanol, and then fully washed with toluene to obtain CdS quantum dots. CdS / CdSe core / shell structure heterojunction was prepared by heating a mixture of 3.5g tri-n-butylphosphine oxide, 0.3g dodecylphosphonic acid and 0.05g chromium oxide to 160°C for mixing; subsequently, the mixtu...

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Abstract

The invention discloses a CdS / CdSe heterojunction quantum dot with a core / shell structure and a preparation method of the CdS / CdSe heterojunction quantum dot. The preparation method comprises the following two steps: preparation of core-layer CdS quantum dots and growth of a shell-layer CdSe structure. The preparation method comprises the following steps: firstly, adding a mixed solution of thioether and organic phosphine into a mixed solution of organic phosphine and chromic oxide, and preparing CdS quantum dots under the protection of nitrogen; then taking the CdS quantum dots as a core layer structure, adding elemental selenium and cadmium oxide, and further growing a CdSe shell layer structure in an organic phosphorus solution through a solvothermal method so as to finally obtain the CdS / CdSe heterojunction quantum dot with the core / shell structure. The prepared CdS / CdSe quantum dots are uniform in size distribution, and accurate control over the diameter of the core-layer CdS quantum dots and the thickness of the shell-layer CdSe in the CdS / CdSe heterojunction can be achieved by adjusting reaction conditions. Compared with the current common CdSe / CdS core-shell structure quantum dot, the CdS / CdSe core-shell structure quantum dot prepared in the invention fully utilizes the excellent photoelectric property of CdSe, and has wide application prospects in the fields of photoluminescence, electroluminescence and photodiodes.

Description

technical field [0001] The invention relates to a CdS / CdSe heterojunction quantum dot with a core / shell structure and a preparation method thereof, belonging to the technical field of preparation of nanometer materials and semiconductor photoelectric materials. Background technique [0002] In recent years, semiconductor quantum dot materials have been widely used in luminescent materials, photosensitive sensors, Research in the fields of biomolecular recognition and detection, bioprobes, and semiconductor devices has received more and more attention. At present, semiconductor quantum dots that are widely studied mainly include unary quantum dots represented by carbon quantum dots and silicon quantum dots, binary quantum dots represented by cadmium sulfide, cadmium selenide, lead sulfide, etc., and indium copper sulfide. ternary quantum dots. Among them, group II-VI binary semiconductor quantum dots, such as cadmium sulfide (CdS) and cadmium selenide (CdSe), have the chara...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02B82Y30/00B82Y20/00
CPCC09K11/883C09K11/02B82Y20/00B82Y30/00
Inventor 訾由黄卫春黄庆秋董晴王梦可朱君
Owner NANTONG UNIVERSITY