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Quartz glass crucible, method for producing silicon single crystal using same, method for measuring infrared transmittance of quartz glass crucible, and method for manufacturing quartz glass crucible

A quartz glass crucible, infrared transmission technology, applied in transmittance measurement, glass manufacturing equipment, glass molding and other directions, can solve the problems of transmittance decrease and transmittance increase, and achieve the effect of improving the manufacturing yield

Pending Publication Date: 2021-09-03
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, Patent Document 1 describes that the infrared transmittance of the crucible also varies depending on the surface roughness, and the surface roughness can be adjusted according to the particle size of the quartz powder of the raw material. The transmittance decreases when the particle size is coarse, and the transmittance increases when the particle size is fine.

Method used

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  • Quartz glass crucible, method for producing silicon single crystal using same, method for measuring infrared transmittance of quartz glass crucible, and method for manufacturing quartz glass crucible
  • Quartz glass crucible, method for producing silicon single crystal using same, method for measuring infrared transmittance of quartz glass crucible, and method for manufacturing quartz glass crucible
  • Quartz glass crucible, method for producing silicon single crystal using same, method for measuring infrared transmittance of quartz glass crucible, and method for manufacturing quartz glass crucible

Examples

Experimental program
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Effect test

Embodiment 1

[0107]

[0108] The influence of the semi-molten layer on the infrared transmittance of the crucible was investigated. In this investigation, a quartz glass crucible with a diameter of 800 mm (32 inches) was first prepared, and a crucible piece about 30 mm square was cut out from its side wall. The semi-fused layer on the outer surface of the crucible piece sample was not polished in any way, according to JIS B0601 As a result of measuring the surface roughness of the outer surface according to the -2001 standard, the arithmetic mean roughness Ra was 30 μm.

[0109] Secondly, the infrared transmittance of the crucible piece sample was measured. In the measurement of infrared transmittance, a laser power meter (light receiving device) with a diameter of 22 mm in the light receiving part is installed at a position 43 mm away from the infrared lamp with a wavelength of 0.5 to 3.5 μm and a peak wavelength of 1.0 μm, and a crucible piece sample of about 30 mm square is placed in ...

Embodiment 2

[0118] The infrared transmittances of the side walls, corners, and bottom of the quartz glass crucible sample #2 according to Example 2 were 70%, 25%, and 50%, respectively. The oxygen concentration in the single crystal silicon pulled using this crucible sample #2 was 9×10 17 ~12×10 17 atoms / cm 3 In the range of , it becomes a particularly low value, and there is no dislocation in the single crystal.

Embodiment 3

[0119] The infrared transmittances of the side walls, corners, and bottom of the quartz glass crucible sample #3 according to Example 3 were 56%, 33%, and 36%, respectively. The oxygen concentration in the single crystal silicon pulled using this crucible sample #3 was 9×10 17 ~12×10 17 atoms / cm 3 In the range of , it becomes a particularly low value, and there is no dislocation in the single crystal.

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Abstract

The invention provides a quartz glass crucible capable of increasing the production yield of a silicon single crystal having a low oxygen concentration. The quartz glass crucible (1) has: cylindrical side wall portions (10a); a bottom portion (10b); and corner portions (10c) interconnecting the side wall portions (10a) and the bottom portion (10b), wherein the quartz glass crucible (1) is provided with: a transparent layer (11) made of a quartz glass which does not contain a bubble; a bubble layer (12) formed on the outside of the transparent layer (11) and made of a quartz glass containing a large number of bubbles; and a semi-molten layer (13) which is formed on the outside of the bubble layer (12) and in which raw silica powder is solidified in a semi-molten state. The infrared transmittance of the corner portions (10c) is 25-51% in a state in which the semi-molten layer (13) is excluded, the infrared transmittance of the corner portions (10c) is lower than the infrared transmittance of the side wall portions (10a) in a state in which the semi-molten layer (13) is excluded, and the infrared transmittance of the side wall portions (10a) is lower than the infrared transmittance of the bottom portion (10b) in a state in which the semi-molten layer (13) is excluded.

Description

technical field [0001] The present invention relates to a quartz glass crucible used in the production of single crystal silicon by the pulling method (CZ method), and a method for producing single crystal silicon using the quartz glass crucible. Furthermore, the present invention relates to a method for evaluating the infrared transmittance of such a quartz glass crucible and a method for manufacturing a quartz glass crucible using the evaluation method. Background technique [0002] Quartz glass crucibles are used in the production of silicon single crystals by the CZ method. In the CZ method, a silicon raw material is heated and melted in a quartz glass crucible, a seed crystal is soaked in the molten silicon, and the seed crystal is slowly pulled while rotating the crucible to grow a single crystal. In order to manufacture high-quality single crystal silicon for semiconductor devices at low cost, it is necessary to increase the single crystallization rate in a single pu...

Claims

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Application Information

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IPC IPC(8): C30B29/06C03B20/00C30B15/10F27B14/10
CPCC30B29/06C30B15/10F27B14/10C03B19/095Y02P40/57C03C3/06C03C4/10C03C2204/08C03C17/004C03C17/005C03C17/245C03C17/25C03C2217/213C03C2218/113C03C2218/15C03B20/00G01N21/59C03C19/00G01N21/3563G01N33/386
Inventor 北原贤福井正德岸弘史片野智一北原江梨子
Owner SUMCO CORP
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