Resistive layer material, organic memristor and preparation method thereof
A technology of resistive switching layer and memristor, applied in electrical components and other directions, can solve problems such as thermal failure of organic memristors, and achieve the effects of good performance, good cycle performance and retention, and good application value
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Embodiment 1
[0032] This embodiment provides an organic memristor, the preparation method of which is as follows:
[0033] (1) Mix polyethyleneimine (PEI) with ethanol (analytically pure) to prepare a polyethyleneimine solution with a concentration of 10 mg / mL, and dope 100 μL of boron nitride quantum dots into 5 mL of polyethyleneimine solution (BNQDs), obtain the resistive layer material;
[0034] (2) Evaporating a Ti metal layer with a thickness of 5nm on the glass substrate by using an electron beam evaporation process, and then vapor-depositing a Pt electrode with a thickness of 30nm on the Ti metal layer as the bottom electrode;
[0035] (3) Spin coating the resistive layer material prepared in step (1) on the bottom electrode prepared in step (2) to form a resistive layer with a thickness of 300nm;
[0036] (4) On the resistive layer prepared in step (3), an Ag electrode with a thickness of 30 nm is evaporated by an electron beam evaporation process as a top electrode, and a Ni met...
Embodiment 2
[0038] This embodiment provides an organic memristor, the preparation method of which is as follows:
[0039] (1) Mix polyethyleneimine (PEI) with N,N-dimethylformamide (DMF) to prepare a polyethyleneimine solution with a concentration of 8mg / mL, and dope to 5mL polyethyleneimine solution 150 μL of boron nitride quantum dots (BNQDs) to obtain the resistive layer material;
[0040] (2) Evaporating a Ti metal layer with a thickness of 5 nm on the glass substrate by electron beam evaporation technology, and then vapor-depositing a Pt electrode with a thickness of 20 nm on the Ti metal layer as the bottom electrode;
[0041] (3) Spin coating the resistive layer material prepared in step (1) on the bottom electrode prepared in step (2) to form a resistive layer with a thickness of 500 nm;
[0042] (4) On the resistive layer prepared in step (3), an Ag electrode with a thickness of 20 nm is evaporated by an electron beam evaporation process as a top electrode, and a Ni metal layer ...
experiment example
[0044] Voltage-current measurements were performed under air using a Keithley 2636B SourceMeter with a dual-probe system and a heated-grade semiconductor characterization system, obtaining as figure 2 The I-V curves shown, where the Ag top electrode is positively biased while the Pt bottom electrode is grounded, are swept with a constant step voltage of 20mV / s. Such as figure 2 As shown, the organic memristor provided by the present invention exhibits good performance when tested at 220°C. However, the maximum heat-resistant temperature of polyethyleneimine solution not doped with boron nitride quantum dots can only reach about 150 °C, and polyethyleneimine will fail to crack after exceeding this temperature ("Robust Polyethyleneimine Electrolyte for High Performance and Thermally-Stable Atomic Switch Memristors. "Advanced Functional Materials (2020).).
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Abstract
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