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Back film structure of PERC solar cell, preparation method thereof, solar cell and solar cell assembly

A solar cell and back film technology, applied in the field of solar cells, can solve the problems of high production cost of PERC solar cells

Pending Publication Date: 2021-09-10
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a back film structure of PERC solar cells, aiming to solve the problem that the back film structure of PERC solar cells in the prior art is prepared by TMA, which leads to high production cost of PERC solar cells

Method used

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  • Back film structure of PERC solar cell, preparation method thereof, solar cell and solar cell assembly
  • Back film structure of PERC solar cell, preparation method thereof, solar cell and solar cell assembly
  • Back film structure of PERC solar cell, preparation method thereof, solar cell and solar cell assembly

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Embodiment 2

[0068] Please refer to figure 2 , the present invention also provides a preparation method of the back film structure of the PERC solar cell, the preparation method of the back film structure of the PERC solar cell is used to prepare the back film structure of the PERC solar cell of Example 1, the method comprising:

[0069] Step S20, preparing a first silicon oxynitride layer 2 on the back side of the silicon substrate 1;

[0070] In the embodiment of the present invention, the silicon wafer substrate 1 is obtained from a monocrystalline silicon wafer after undergoing texturing, diffusion, SE laser, etching and annealing treatments, and the specific treatment process includes:

[0071] Clean and texture the single crystal silicon wafer, remove the damaged layer on the surface of the silicon wafer, and at the same time make a textured surface on the front surface of the silicon wafer; deposit doping sources on the surface of the single crystal silicon wafer and perform therma...

Embodiment 3

[0089] Please refer to image 3 , on the basis of Embodiment 2, before the step of depositing the first silicon oxynitride layer on the back side of the silicon wafer, it also includes:

[0090] Step S10, using PECVD equipment to ionize ammonia and laughing gas, using the ionized H - and O 2- The backside of the silicon wafer substrate 1 is purged.

[0091] In this step, ammonia and laughing gas are ionized by PECVD equipment, and the H - and O 2- The step of purging the back side of the silicon wafer substrate 1 specifically includes:

[0092] Using PECVD equipment, at a temperature of 410-480°C, an ammonia gas flow of 2500-4000sccm, a laughing gas flow of 2000-5000sccm, a deposition pressure of 900-1600mTor, a radiation power of 3800-5000W, a deposition duty cycle of 2:30-2:60ms, radio frequency Discharge for 120-250s to utilize the ionized H - and O 2- The backside of the silicon wafer substrate is purged.

[0093] In this embodiment, before using PECVD equipment to...

Embodiment 4

[0095] Please refer to Figure 4 , on the basis of Example 3, ammonia gas and laughing gas are ionized by PECVD equipment, and the H - and O 2- After the step of purging the backside of the silicon wafer substrate 1, before the step of preparing the first silicon oxynitride layer 2 on the backside of the silicon wafer substrate 1, it also includes:

[0096] Step S15, using PECVD equipment to ionize the laughing gas, using the ionized O 2- The backside of the silicon wafer substrate 1 is purged.

[0097] In this embodiment, the laughing gas is ionized by PECVD equipment, and the O2- obtained by ionizing the laughing gas is used to further purge the back side of the silicon wafer substrate 1 to saturate the H produced in step S10. + or H 3 o + , can form a neutral or negative electric field, which is beneficial to the subsequent deposition of the first silicon oxynitride layer 2 .

[0098] As an embodiment of the present invention, using O 2- Purging the back of the silic...

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Abstract

The invention belongs to the technical field of solar cells, and provides a back film structure of a PERC solar cell, a preparation method thereof, a solar cell and a solar cell assembly. The back film structure of the PERC solar cell comprises a first silicon oxynitride layer, a silicon nitride layer, a second silicon oxynitride layer and a silicon oxide layer which are sequentially formed from top to bottom on the back surface of a silicon wafer substrate, wherein the silicon nitride layer is composed of at least two layers of silicon nitride films, and the refractive indexes of the silicon nitride films of all the layers are sequentially reduced from top to bottom. The back film structure of the PERC solar cell does not need to be prepared from a TMA material, so that the production cost of the PERC solar cell can be greatly reduced; and meanwhile, the refractive index of the silicon nitride layer is gradually reduced from top to bottom, so that the light incidence rate of the back surface of the PERC solar cell can be fully improved, the light absorption of the back surface of the PERC solar cell is increased, and then the conversion efficiency of the PERC solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a back film structure of a PERC solar cell, a preparation method, a solar cell and components. Background technique [0002] With the development of solar cell technology, more and more attention has been paid to the reliability of solar cells. PERC solar cell is currently the mainstream product of solar cells. Due to its back passivation, it can greatly reduce the back recombination loss of solar cells, increase the open circuit voltage of solar cells, and significantly improve the efficiency of solar cells. Efficiency improvement and cost reduction of solar cells are the main theme of battery research and development. The PERC solar cell technology route is compatible with traditional production lines, has the advantages of low cost of transformation and obvious efficiency improvement, and is gradually becoming the mainstream technology route of solar cells. The main techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/34C23C16/40C23C16/02C23C16/505H01L31/0216H01L31/18
CPCC23C16/308C23C16/345C23C16/401C23C16/0245C23C16/505H01L31/02167H01L31/1804Y02P70/50Y02E10/547
Inventor 杨苏平吴疆谢新明盛健林纲正陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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