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Preparation method of VCSEL

A technology of dry etching and epitaxial wafers, which is applied to laser components, electrical components, lasers, etc., and can solve problems such as unqualified VCSEL performance tests

Pending Publication Date: 2021-09-14
威科赛乐微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The current mainstream VCSELs include 200mW, 660nm, 980nm, 940nm, etc. Among them, the production process of 940nm VCSEL requires at least eight masks, four etchings and five metal platings. There are more than 30 steps in total, and the production cycle is about For 10 days, there is also a short-period preparation method in the prior art, which only needs three steps of photolithography, but the performance test of the prepared VCSEL is unqualified

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  • Preparation method of VCSEL
  • Preparation method of VCSEL
  • Preparation method of VCSEL

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Embodiment

[0033] S1: Take an epitaxial wafer with a full structure. The epitaxial wafer with a full structure includes a single crystal substrate 1, N-DBR 2, oxide layer 3, quantum well active layer 4, P-DBR 5, etc. in this embodiment. The single crystal substrate is a gallium arsenide substrate, which is cleaned and dried, and then a layer of SiNx or SiO is grown on the N surface of the epitaxial wafer by the existing method. 2 As the stress film 6 , the stress film can compensate for warpage, make the wafer flat, and facilitate subsequent photolithography, exposure, and other treatments, and its thickness can be selected according to actual conditions.

[0034] S2: Using the existing technology, spin-coat a layer of positive photoresist on the P side of the wafer. After exposure and development, the developed photoresist must completely cover the mesa, so as to ensure the subsequent etching effect. The steps 7 are formed on the wafer by dry etching, the glue is removed, and the oxide ...

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Abstract

The invention discloses a preparation method of a VCSEL, and relates to the technical field of vertical cavity surface emitting lasers. According to the preparation method of the VCSEL, the whole preparation process is simplified, when electrode metal deposition is carried out, an evaporation process is not used, a traditional double-layer glue process is eliminated, under the condition that the performance and the yield are guaranteed, the preparation procedures are greatly reduced, the purpose of rapidly preparing a chip is achieved, and a lot of time and manpower can be saved.

Description

technical field [0001] The invention relates to the technical field of vertical cavity surface emitting lasers, in particular to a preparation method of a VCSEL. Background technique [0002] The full name of VCSEL is vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL), referred to as surface emitting laser. Compared with other light sources such as LED (light-emitting diode), LD (Laser Diode, laser diode), DFB laser, etc., VCSEL light source has many excellent characteristics, including: high luminous efficiency, extremely low power consumption, good beam quality, easy fiber coupling, The adjustable frequency can reach several Giga Hz, ultra-narrow linewidth, extremely high beam quality, high polarization ratio, and low cost. [0003] The current mainstream VCSELs include 200mW, 660nm, 980nm, 940nm, etc. Among them, the production process of 940nm VCSEL requires at least eight masks, four etchings and five metal platings. There are more t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/042
CPCH01S5/183H01S5/0425
Inventor 王田瑞王凤玲张健刘奇平登宏
Owner 威科赛乐微电子股份有限公司