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Organic magnesium compound and electronic device

A technology for electronic devices and compounds, applied in magnesium organic compounds, electrical components, semiconductor devices, etc., can solve the problems of uneven magnesium doping concentration in chips, inability to meet requirements, and only suitable for magnesium compounds, and improve the stability of production processes. The effect of improving the production rate of gallium and the uniform distribution of magnesium components

Active Publication Date: 2021-10-01
JIANGSU NATA OPTO ELECTRONICS MATERIAL
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Magnesium is usually used as a dopant in the epitaxial growth of P-type gallium nitride technology. Magnesium dicene is the most commonly used source of magnesium. Its melting point is greater than 170 ° C. It is a colorless crystal at normal temperature and pressure. As a solid source, magnesium dicene There are many limitations, for example, due to the small surface area of ​​the product particles, and "channeling" is easy to occur in the steel cylinder used, resulting in unstable vapor pressure, uneven doping concentration of magnesium in the prepared chip, and the usage rate of magnesium dicene is lower than 20%
[0005] Solid-state magnesocene can no longer meet the needs of the existing process for large-flow magnesium source steam
In order to solve this problem, the prior art generally optimizes the substituents on the magnesocene ring or the form of the magnesocene. A magnesium compound suitable for atomic layer deposition, the magnesium compound maintains the overall structure of magnesiumocene, and at the same time replaces a hydrogen atom on the magnesiumocene ring with isopropyl, sec-butyl or tert-butyl, but the Magnesium compounds are only suitable for atomic layer deposition
Chinese patent literature (application publication number: CN1399006A, application publication date: February 26, 2003) discloses a method for preparing a solution magnesium source, which disperses magnesium dicene or dimethyl magnesium dicene in a solvent, A high-concentration solution magnesium source is formed to replace the solid-state magnesium dicene, but this method inevitably introduces solvents that interfere with the epitaxy process

Method used

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  • Organic magnesium compound and electronic device
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  • Organic magnesium compound and electronic device

Examples

Experimental program
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Effect test

preparation example Construction

[0025] The preparation process of the organic magnesium compound represented by the structural formula (1) is as follows:

[0026] In an anhydrous anhydress oxygenless glove box, in the quartz synthetic column with a heating wire, high-pure magnesium films were added to the baffle in the synthetic column, and the synthetic column was placed vertically; There is a 500 mL band rotor champion, and the funnel is added to 500 ml of methylcyclopentadiene monomer. The upper port is connected to the argon cylinder; below the synthetic column, 2,000 ml of two flasks, the flask remaining The interface is connected to the serpentine condenser, the coolant sets 32 ° C, the condenser upper mouth is connected to the exhaust gas absorbing device; the synthesis apparatus in the 5 l / min, the nitrogen in the synthesis apparatus is replaced, and the time is 30 min, and the purge is complete. After adjusting the airflow to the bubble device, the foam is bubbles at a speed per second; the heating wi...

Embodiment 1

[0042] An epitaxial sheet of the light-emitting diode was prepared as a dopant using the organic magnesium compound as shown in structure formula (1):

[0043] 1) Place the sapphire substrate into the carrier disk in the MOCVD reaction chamber, grow 25 nm buffer layer under temperature 540 ° C, growth pressure 300 TORR conditions, wherein the buffer layer is a low temperature GaN buffer layer, and the GA source required for growth TMG source (trimethyl gallium), growth atmosphere is h 2 Atmosphere;

[0044] 2) On the buffer layer, a non-intentional doped nitride layer having a temperature of 2.5 μm is grown at a temperature of 1080 ° C, a growth pressure 200 TORR, wherein the non-intentional doped nitride layer is non-intentionally doped GaN layer, the desired GA source is TMG source, the growth atmosphere is h 2 Atmosphere;

[0045] 3) On the non-intentionally doped nitride layer, the N-type nitride layer of 2.5 μm is grown under temperature 1060 ° C, the growth pressure 200 TORR...

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Abstract

The invention provides an organic magnesium compound, which has a structure represented by a structural formula (1) shown in the specification. The organic magnesium compound in the structural formula (1) is in a liquid state in a working state, has stable high saturated vapor pressure, and is very suitable for being used as a magnesium source dopant for semiconductor doping. The magnesium component is uniformly distributed in the magnesium source process, the epitaxy uniformity and the production process stability are improved, and the organic magnesium compound is suitable for large-size substrate epitaxy. On the other hand, the vapor pressure is very stable at the last stage of use of the magnesium source, so that the use efficiency and the gallium production efficiency are improved, the production cost is reduced, and the organic magnesium compound is suitable for large-scale mass production.

Description

Technical field [0001] The present application relates to the field of metallic organic compounds, and more particularly to organic magnesium compounds and electronic devices. Background technique [0002] The third generation of semiconductor materials are mainly based on gallium nitride, silicon carbide, and the production process is divided into three major steps of single crystal growth, epitaxial layer growth and device manufacturing, corresponding to industrial chain substrate, epitaxial, device and module. The link. [0003] Extension is the intermediate link of the core of the entire industry chain. The epitaxial process technology directly affects the performance of the device, and the development of the industry is very important, and the metal organic compound is the key support of the epitaxial technology, the purity and vapor pressure of metal organic compounds. Stability Directly determines the performance of the device, so the technical development of metal organic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F3/02H01L33/32
CPCC07F3/02H01L33/325
Inventor 杨敏徐耀中范光华李芳芳刘子伟徐涛沈波
Owner JIANGSU NATA OPTO ELECTRONICS MATERIAL
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