GaN power device single event effect pulse laser test method

Abstract

The invention discloses a GaN power device single event effect pulse laser test method, which utilizes a single-photon and two-photon absorption mechanism pulse laser equivalent heavy ion evaluation technology of a GaN power device single event effect, and creatively adopts a technical method combining theory and test. A GaN power device is used as a typical application demonstration, a theoretical model of effective deposition energy and an equivalent LET value of a pulse laser front and back radiation GaN sample is formed according to the test requirement of the single event effect of a wide bandgap device, and a characterization method and basis of a laser quantitative evaluation test are defined; and a laser and heavy ion comparison test of the single event effect sensitivity is performed, and the corresponding relation between the laser effective energy and the heavy ion LET value of the device is determined. The method can be used as an important supplement for heavy ion experiments, the experiment cost is reduced, the experiment efficiency and accuracy are improved, and a test reference is provided for selection of anti-radiation devices and anti-radiation reinforcement design in practical application.

Description

technical field [0001] The invention belongs to the field of radiation effect evaluation and reinforcement design of aerospace electronic devices, and in particular relates to a GaN power device single event effect pulse laser test method. Background technique [0002] Gallium nitride (GaN), as a third-generation semiconductor material, is considered to be the most promising semiconductor material after the first-generation semiconductor material silicon (Si) and the second-generation semiconductor material gallium arsenide (GaAs). Although Si-based devices are close to the theoretical limit value, there is still a certain gap between the performance of the third-generation semiconductors, and GaN materials have a greater development space from the theoretical limit value. GaN has a wide band gap, high breakdown electric field, high electron saturation drift velocity, high melting point, low on-state resistance, high breakdown voltage, and high radiation resistance. Excelle...

AI Technical Summary

Problems solved by technology

Due to the limitations of the special physical absorption mechanism of the wide-bandgap semiconductor device laser and different optical modulation methods, the accuracy of the test method and model has declined.

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